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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Iii, J. W. Ager
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2012P-type InGaN across entire composition range
- 2011Mg doped InN and confirmation of free holes in InNcitations
- 2009Electrical and electrothermal transport in InNcitations
- 2007Superheating and supercooling of Ge nanocrystals embedded in SiO 2citations
- 2007Synthesis and optical properties of multiband III-V semiconductor alloyscitations
- 2006Multiband GaNAsP quaternary alloyscitations
- 2005Highly mismatched alloys for intermediate band solar cells
- 2005A chemical approach to 3-D lithographic patterning of Si and Ge nanocrystals
- 2004Oxygen induced band-gap reduction in ZnOxSe1-x alloyscitations
- 2004Group III-nitride alloys as photovoltaic materialscitations
- 2004Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloyscitations
- 2004Effect of oxygen on the electronic band structure of II-O-VI alloyscitations
- 2004Characterization and manipulation of exposed Ge nanocrystals
- 2003Band-gap bowing effects in BxGa1-xAs alloyscitations
- 2003Narrow bandgap group III-nitride alloyscitations
- 2003Effect of oxygen on the electronic band structure in ZnOxSe1-x alloyscitations
- 2000Effect of nitrogen on the electronic band structure of group III-N-V alloys
- 2000Effect of nitrogen on the band structure of III-N-V alloys
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article
Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloys
Abstract
The effect of pressure on the electronic band structure of Zn<sub>1-y</sub>Mn<sub>y</sub>O<sub>x</sub>Te<sub>1-x</sub> alloys was studied by investigating the optical transitions associated with the Τ point at the conduction-band and the valence-band edges. The Zn<sub>1-y</sub>Mn<sub>y</sub>O<sub>x</sub>Te<sub>1-x</sub> samples were found to exhibit a classical band-anticrossing behavior with the formation of two conduction subbands resulting from the strong interaction between the extended conduction-band states of Zn<sub>1-y</sub>Mn<sub>y</sub>Te and the localized O states. By examining the effect of applied pressure on the E_ transition, the energetic position of E<sub>D</sub>=E<sub>V</sub>+2.0±0.1 eV for the localized O level and its pressure dependence of 0.6±0.1 meV/kbar were derived from the experimental results.