Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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977 Locations available

693.932 PEOPLE
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Naji, M.
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Koinuma, H.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (17/17 displayed)

  • 2005Improved stoichiometry and misfit control in perovskite thin film formation at a critical fluence by pulsed laser deposition240citations
  • 2004High-resolution synchrotron-radiation photoemission characterization for atomically-controlled SrTiO3(001) substrate surfaces subjected to various surface treatments49citations
  • 2004Epitaxial growth and physical properties of a room temperature ferromagnetic semiconductor: Anatase phase Ti1−xCoxO232citations
  • 2003A high-resolution synchrotron-radiation angle-resolved photoemission spectrometer with <i>in situ</i> oxide thin film growth capability122citations
  • 2003Modeling and simulation of polycrystalline ZnO thin-film transistors303citations
  • 2003Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layer71citations
  • 200345° rotational epitaxy of SrTiO3 thin films on sulfide-buffered Si13citations
  • 2003Experimental investigation of ferromagnetism in II-VI disordered semiconducting compounds1citations
  • 2003Quantitative control and detection of heterovalent impurities in ZnO thin films grown by pulsed laser deposition39citations
  • 2002Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layers31citations
  • 2002Vapor–liquid–solid tri-phase pulsed-laser epitaxy of RBa2Cu3O7−y single-crystal films64citations
  • 2002In-plane lattice constant tuning of an oxide substrate with Ba1−xSrxTiO3 and BaTiO3 buffer layers42citations
  • 2002Systematic examination of carrier polarity in composition spread ZnO thin films codoped with Ga and N96citations
  • 2001Ferromagnetic interactions in p- and n-type II-VI diluted magnetic semiconductorscitations
  • 2001High-temperature goniometer for thin film growth and ion scattering studies11citations
  • 2001Anatase TiO2 thin films grown on lattice-matched LaAlO3 substrate by laser molecular-beam epitaxy149citations
  • 2000In-plane anisotropic strain of ZnO closely packed microcrystallites grown on tilted (0001) sapphirecitations

Places of action

Chart of shared publication
Lippmaa, M.
5 / 6 shared
Meguro, S.
1 / 1 shared
Ohnishi, T.
2 / 2 shared
Kobayashi, D.
1 / 1 shared
Ono, K.
2 / 3 shared
Oshima, M.
2 / 2 shared
Kumigashira, H.
2 / 5 shared
Tamura, K.
4 / 5 shared
Yamada, Y.
1 / 8 shared
Tsukazaki, A.
4 / 9 shared
Nakajima, K.
3 / 7 shared
Chikyow, T.
5 / 6 shared
Toyosaki, H.
1 / 1 shared
Fukumura, T.
5 / 9 shared
Aoyama, T.
1 / 2 shared
Segawa, Y.
5 / 5 shared
Hasegawa, T.
1 / 5 shared
Horiba, K.
1 / 4 shared
Nakagawa, N.
1 / 1 shared
Ohguchi, H.
1 / 1 shared
Ohtomo, A.
5 / 6 shared
Fujioka, H.
1 / 1 shared
Ohno, H.
1 / 25 shared
Nishii, J.
1 / 1 shared
Takagi, S.
1 / 3 shared
Hossain, Faruque M.
1 / 1 shared
Chichibu, S. F.
1 / 1 shared
Yoshida, S.
1 / 4 shared
Koida, T.
1 / 2 shared
Makino, T.
3 / 7 shared
Chia, C. H.
2 / 2 shared
Yoo, Y.-Z.
1 / 1 shared
Konishi, Y.
1 / 1 shared
Yonezawa, Y.
1 / 1 shared
Song, J. H.
2 / 2 shared
Jin, Zheng-Wu
1 / 1 shared
Ahmet, P.
4 / 5 shared
Dietl, Tomasz
2 / 262 shared
Matsukura, F.
1 / 23 shared
Sawicki, M.
2 / 67 shared
Van Khoi, L.
2 / 4 shared
Kawasaki, M.
3 / 40 shared
Jin, Z.
1 / 5 shared
Sumiya, M.
2 / 2 shared
Fuke, S.
2 / 2 shared
Matsumoto, Y.
2 / 7 shared
Kanda, N.
1 / 1 shared
Choi, B. D.
1 / 1 shared
Yun, K. S.
1 / 1 shared
Itoh, T.
1 / 3 shared
Terai, K.
1 / 1 shared
Fujii, T.
1 / 4 shared
Saito, H.
1 / 1 shared
Ohtani, M.
1 / 1 shared
Andrearczyk, T.
1 / 21 shared
Cibert, J.
1 / 24 shared
Tatarenko, S.
1 / 20 shared
Jaroszynski, J.
1 / 26 shared
Ferrand, D.
1 / 25 shared
Jin, Zw
1 / 1 shared
Bourgognon, C.
1 / 5 shared
Ohashi, S.
1 / 1 shared
Furumochi, T.
1 / 1 shared
Nagasawa, H.
1 / 1 shared
Ishida, T.
1 / 3 shared
Satoh, T.
1 / 1 shared
Murakami, M.
1 / 6 shared
Wong, Gkl
1 / 1 shared
Tang, Zk
1 / 1 shared
Siah, F.
1 / 1 shared
Chart of publication period
2005
2004
2003
2002
2001
2000

Co-Authors (by relevance)

  • Lippmaa, M.
  • Meguro, S.
  • Ohnishi, T.
  • Kobayashi, D.
  • Ono, K.
  • Oshima, M.
  • Kumigashira, H.
  • Tamura, K.
  • Yamada, Y.
  • Tsukazaki, A.
  • Nakajima, K.
  • Chikyow, T.
  • Toyosaki, H.
  • Fukumura, T.
  • Aoyama, T.
  • Segawa, Y.
  • Hasegawa, T.
  • Horiba, K.
  • Nakagawa, N.
  • Ohguchi, H.
  • Ohtomo, A.
  • Fujioka, H.
  • Ohno, H.
  • Nishii, J.
  • Takagi, S.
  • Hossain, Faruque M.
  • Chichibu, S. F.
  • Yoshida, S.
  • Koida, T.
  • Makino, T.
  • Chia, C. H.
  • Yoo, Y.-Z.
  • Konishi, Y.
  • Yonezawa, Y.
  • Song, J. H.
  • Jin, Zheng-Wu
  • Ahmet, P.
  • Dietl, Tomasz
  • Matsukura, F.
  • Sawicki, M.
  • Van Khoi, L.
  • Kawasaki, M.
  • Jin, Z.
  • Sumiya, M.
  • Fuke, S.
  • Matsumoto, Y.
  • Kanda, N.
  • Choi, B. D.
  • Yun, K. S.
  • Itoh, T.
  • Terai, K.
  • Fujii, T.
  • Saito, H.
  • Ohtani, M.
  • Andrearczyk, T.
  • Cibert, J.
  • Tatarenko, S.
  • Jaroszynski, J.
  • Ferrand, D.
  • Jin, Zw
  • Bourgognon, C.
  • Ohashi, S.
  • Furumochi, T.
  • Nagasawa, H.
  • Ishida, T.
  • Satoh, T.
  • Murakami, M.
  • Wong, Gkl
  • Tang, Zk
  • Siah, F.
OrganizationsLocationPeople

article

Modeling and simulation of polycrystalline ZnO thin-film transistors

  • Ohtomo, A.
  • Fujioka, H.
  • Ohno, H.
  • Nishii, J.
  • Takagi, S.
  • Hossain, Faruque M.
  • Fukumura, T.
  • Koinuma, H.
Abstract

<jats:p>Thin-film transistors (TFTs) made of transparent channel semiconductors such as ZnO are of great technological importance because their insensitivity to visible light makes device structures simple. In fact, there have been several demonstrations of ZnO TFTs achieving reasonably good field effect mobilities of 1–10 cm2/V s, but the overall performance of ZnO TFTs has not been satisfactory, probably due to the presence of dense grain boundaries. We modeled grain boundaries in ZnO TFTs and performed simulation of a ZnO TFT by using a two-dimensional device simulator in order to determine the grain boundary effects on device performance. Polycrystalline ZnO TFT modeling was started by considering a single grain boundary in the middle of the TFT channel, formulated with a Gaussian defect distribution localized in the grain boundary. A double Schottky barrier was formed in the grain boundary, and its barrier height was analyzed as a function of defect density and gate bias. The simulation was extended to TFTs with many grain boundaries to quantitatively analyze the potential profiles that developed along the channel. One of the main differences between a polycrystalline ZnO TFT and a polycrystalline Si TFT is that the much smaller nanoscaled grains in a polycrystalline ZnO TFT induces a strong overlap of the double Schottky barriers with a higher activation energy in the crystallite and a lower barrier potential in the grain boundary at subthreshold or off-state region of its transfer characteristics. Through the simulation, we were able to estimate the density of total trap states localized in the grain boundaries for polycrystalline ZnO TFT by determining the apparent mobility and grain size in the device.</jats:p>

Topics
  • density
  • impedance spectroscopy
  • grain
  • grain size
  • mobility
  • grain boundary
  • simulation
  • semiconductor
  • defect
  • two-dimensional
  • activation