693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Matsuura, A. Y.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2008Soft X-ray spectroscopy study of electronic structure in the organic semiconductor titanyl phthalocyanine (TiO-Pc)citations
- 2006Electronic structure in thin film organic semiconductors studied using soft X-ray emission and resonant inelastic X-ray scatteringcitations
- 2003Surface degradation of InxGa1-xN thin films by sputter-anneal processingcitations
Places of action
| Organizations | Location | People |
|---|
article
Surface degradation of InxGa1-xN thin films by sputter-anneal processing
Abstract
<p>The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In <sub>0.12</sub>Ga<sub>0.88</sub>N were studied. Samples annealed at 700°C for 5 h showed clear evidence of phase separation. Annealing at this temperatures with the sample surface directly exposed to ultrahigh vacuum (UHV) produced a surface deficient in In, and considerable surface roughness.</p>