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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ohtomo, A.
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Topics
Publications (6/6 displayed)
- 2006Electronic transport properties in SrTiO3–LaAlO3 solid-solution filmscitations
- 2003Modeling and simulation of polycrystalline ZnO thin-film transistorscitations
- 2003Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layercitations
- 2003Quantitative control and detection of heterovalent impurities in ZnO thin films grown by pulsed laser depositioncitations
- 2002Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layerscitations
- 2000In-plane anisotropic strain of ZnO closely packed microcrystallites grown on tilted (0001) sapphire
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article
Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layer
Abstract
<jats:p>The growth mode of ZnO thin films can be well regulated in a molecular layer-by-layer growth by employing a ZnO buffer layer deposited on a lattice-matched ScAlMgO4 substrate and annealed at high temperature. The annealed buffer layer has atomically flat surface and relaxed (strain-free) crystal structure. The intensity oscillation of reflection high-energy electron diffraction persisted for more than a 100-nm film deposition under optimized conditions on such a buffer layer. Thus prepared thin films show free exciton emissions in a 5 K photoluminescence spectrum and excited-state exciton resonance structures in a reflection spectrum, both indicating very high optical quality.</jats:p>