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Publications (9/9 displayed)
- 2017The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes
- 2008Self-sustained output power pulsations in InGaAs quantum dot ridge-waveguide laserscitations
- 2007Modeling and characterization of InAsGaAs quantum dot lasers grown using metal organic chemical vapor depositioncitations
- 2006Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixingcitations
- 2006Effect of rapid thermal annealing on the atomic intermixing of Zn- and C-doped InGaAs/AlGaAs quantum well laser structurescitations
- 2004Characteristics of MOCVD-Grown thin p-clad InGaAs quantum-dot laserscitations
- 2003Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetectorcitations
- 2003Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure designcitations
- 2003Improvement of the Kink-Free Operation in Ridge-Waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridgecitations
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article
Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector
Abstract
<p>Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector (QDIP) was studied. Temperatures in the range of 600-800°C for 60 s, typical of atomic interdiffusion were used. The devices exhibited large dark currents after rapid thermal annealing.</p>