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Naji, M. |
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Motta, Antonella |
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Ali, M. A. |
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Rančić, M. |
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Azevedo, Nuno Monteiro |
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Stiff-Roberts, A.
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article
Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector
Abstract
<p>Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector (QDIP) was studied. Temperatures in the range of 600-800°C for 60 s, typical of atomic interdiffusion were used. The devices exhibited large dark currents after rapid thermal annealing.</p>