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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Shacham, Yosi
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2020Fracture strength and fatigue endurance in Gd-doped ceria thermal actuatorscitations
- 2019Femtosecond laser processing of ceria-based micro actuatorscitations
- 2018Towards fully polymeric electroactive micro actuators with conductive polymer electrodescitations
- 2012Nano-imprinting lithography of P(VDF-TrFE-CFE) for flexible freestanding MEMS devicescitations
- 2009Metallization technologies and strategies for plastic based biochips, sensors and actuators for healthcare and medical applicationscitations
- 2003Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallizationcitations
- 2003Structure of electroless deposited Co0.9W0.02P 0.08 thin films and their evolution with thermal annealingcitations
- 2003 The role of microstructure in nanocrystalline conformal Co 0.9 W 0.02 P 0.08 diffusion barriers for copper metallization citations
- 2002Improved diffusion barriers for copper metallization obtained by passivation of grain boundaries in electroless deposited cobalt-based filmscitations
- 2001Evaluation of electroless deposited Co(W,P) thin films as diffusion barriers for copper metallizationcitations
- 2001Characterization of electroless deposited Co (W,P) thin films for encapsulation of copper metallizationcitations
Places of action
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article
Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallization
Abstract
<p>Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallization were investigated. The reduced diffusivity in the electroless deposited Co films resulted due to a reduction in the pre-exponential factor. Application of failure criterion to a 30 nm thick Co<sub>0.9</sub>P<sub>0.1</sub> film was in good agreement with that of an electrical evaluation of MOS capacitors.</p>