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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Bih, L. |
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Casati, R. |
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Kočí, Jan | Prague |
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Azam, Siraj |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Mukawa, T.
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article
Effect of oxygen on the electronic band structure in ZnOxSe1-x alloys
Abstract
The effect of alloying small amounts of ZnO with ZnSe on the electronic band structure was analyzed. Photoreflectance and photoluminescence spectroscopies were used to study optical transitions in molecular beam epitaxy grown ZnO<sub>x</sub>Se<sub>1-x</sub> epitaxial films. The band energy gap of the alloys was found to decrease at a rate of about 0.1 eV per atomic percent of oxygen.