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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Robert, F.
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Topics
Publications (6/6 displayed)
- 2022CONCRETE DRYING KINETICS: DEVELOPMENT OF AN ACCELERATED DRYING PROTOCOL IN FIRE TESTINGS
- 2013Adsorption Properties and Inhibition of C38 Steel Corrosion in Hydrochloric Solution by Some Indole Derivates: Temperature Effect, Activation Energies, and Thermodynamics of Adsorptioncitations
- 2010Electrochemical and quantum chemical studies of some indole derivatives as corrosion inhibitors for C38 steel in molar hydrochloric acidcitations
- 2003Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixingcitations
- 2003Characterization of selective quantum well intermixing in 1.3um GaInNAs/GaAs structurescitations
- 2003Quantum well intermixing in GaInNAs/GaAs structurescitations
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article
Characterization of selective quantum well intermixing in 1.3um GaInNAs/GaAs structures
Abstract
Rapid thermal annealing combined with SiO2 caps deposited on the surface of samples by different techniques is used to selectively disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in situ to the stage of blueshift saturation. After thermal annealing under specific conditions, a shift in band gap of over 170 meV has been obtained in sputtered SiO2-capped samples, while uncapped and plasma enhanced chemical vapor deposited SiO2-capped samples demonstrated a negligible shift. Quantum well intermixing in sputtered SiO2-capped samples originates from enhanced compositional interdiffusion due to the generation of point defects by ion bombardment during the sputtering process. Secondary ion mass spectrometry has confirmed that the enhanced blueshift was caused by the interdiffusion of group III atoms (In and Ga) between the quantum wells and barriers. Detailed photoluminescence and excitation spectroscopy were performed to study the optical properties of both intermixed and nonintermixed samples.