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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Riechert, H.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2016Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materialscitations
- 2012Optical switching and related structural properties of epitaxial Ge<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> filmscitations
- 2011Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayercitations
- 2011Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffractioncitations
- 2011Room-temperature spin injection and spin loss across a GaNAs/GaAs interfacecitations
- 2010Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radiuscitations
- 2010Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloyscitations
- 2010Direct measurement and analysis of the conduction band density of states in diluted GaAs 1-x N x alloyscitations
- 2009Effects of nanowire coalescence on their structural and optical properties on a local scalecitations
- 2003Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixingcitations
- 2003Characterization of selective quantum well intermixing in 1.3um GaInNAs/GaAs structurescitations
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article
Characterization of selective quantum well intermixing in 1.3um GaInNAs/GaAs structures
Abstract
Rapid thermal annealing combined with SiO2 caps deposited on the surface of samples by different techniques is used to selectively disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in situ to the stage of blueshift saturation. After thermal annealing under specific conditions, a shift in band gap of over 170 meV has been obtained in sputtered SiO2-capped samples, while uncapped and plasma enhanced chemical vapor deposited SiO2-capped samples demonstrated a negligible shift. Quantum well intermixing in sputtered SiO2-capped samples originates from enhanced compositional interdiffusion due to the generation of point defects by ion bombardment during the sputtering process. Secondary ion mass spectrometry has confirmed that the enhanced blueshift was caused by the interdiffusion of group III atoms (In and Ga) between the quantum wells and barriers. Detailed photoluminescence and excitation spectroscopy were performed to study the optical properties of both intermixed and nonintermixed samples.