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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Macaluso, R.
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Publications (5/5 displayed)
- 2018Resistive switching of anodic TiO2-based Memristors
- 2004Effects of rapid thermal annealing on the optical properties of low-loss 1.3um GaInNAs/GaAs saturable bragg reflectorscitations
- 2003Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixingcitations
- 2003Characterization of selective quantum well intermixing in 1.3um GaInNAs/GaAs structurescitations
- 2003Quantum well intermixing in GaInNAs/GaAs structurescitations
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article
Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing
Abstract
We report an investigation of selective quantum-well intermixing (QWI) in 1.3-µm GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sputtered SiO2-capped samples, while uncapped and SiO2-capped samples by plasma-enhanced chemical vapor deposition demonstrated negligible shift. This selective modification of the band gap in GaInNAs quantum wells has been confirmed by detailed photoluminescence and photoluminescence excitation spectroscopy, and by secondary ion mass spectrometry. The controlled tuning of the band gap of GaInNAs/GaAs by QWI is important for a wide range of photonic integrated circuits and advanced device applications.