| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Riechert, H.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2016Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materialscitations
- 2012Optical switching and related structural properties of epitaxial Ge<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> filmscitations
- 2011Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayercitations
- 2011Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffractioncitations
- 2011Room-temperature spin injection and spin loss across a GaNAs/GaAs interfacecitations
- 2010Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radiuscitations
- 2010Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloyscitations
- 2010Direct measurement and analysis of the conduction band density of states in diluted GaAs 1-x N x alloyscitations
- 2009Effects of nanowire coalescence on their structural and optical properties on a local scalecitations
- 2003Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixingcitations
- 2003Characterization of selective quantum well intermixing in 1.3um GaInNAs/GaAs structurescitations
Places of action
| Organizations | Location | People |
|---|
article
Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing
Abstract
We report an investigation of selective quantum-well intermixing (QWI) in 1.3-µm GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sputtered SiO2-capped samples, while uncapped and SiO2-capped samples by plasma-enhanced chemical vapor deposition demonstrated negligible shift. This selective modification of the band gap in GaInNAs quantum wells has been confirmed by detailed photoluminescence and photoluminescence excitation spectroscopy, and by secondary ion mass spectrometry. The controlled tuning of the band gap of GaInNAs/GaAs by QWI is important for a wide range of photonic integrated circuits and advanced device applications.