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Gao, Q.
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Topics
Publications (22/22 displayed)
- 2023Signature of quantum criticality in cuprates by charge density fluctuationscitations
- 2016Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.citations
- 2016Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.citations
- 2016Controlling the exciton emission of gold coated GaAs-AlGaAs core-shell nanowires with an organic spacer layercitations
- 2016Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions.citations
- 2016III-V compound semiconductor nanowires for optoelectronic device applicationscitations
- 2016Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1-xAs core-shell nanowirescitations
- 2016Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.citations
- 2013Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimizationcitations
- 2012Effect of plasmonic nanoparticles on the quantum efficiency of III-V semiconductor nanowire emitters
- 2012Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires
- 2012Long minority carrier lifetime in Au-catalyzed GaAs/Al xGa 1-xAs core-shell nanowirescitations
- 2012Long minority carrier lifetime in Au-catalyzed GaAs/Al(x)Ga(1-x)As core-shell nanowirescitations
- 2011III-V compound semiconductor nanowires for optoelectronic device applicationscitations
- 2011Compound semiconductor nanowires for optoelectronic device applications
- 2011Growth and properties of III-V compound semiconductor heterostructure nanowirescitations
- 2009III-V compound semiconductor nanowires
- 2009III-V compound semiconductor nanowirescitations
- 2009Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructurescitations
- 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
- 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
- 2003Implant isolation of Zn-doped GaAs epilayerscitations
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article
Implant isolation of Zn-doped GaAs epilayers
Abstract
<p>The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was investigated using H, Li, C, and O ion implantation. Effects of ion species, doping concentration, and implantation temperature were also studied. Results showed that the substrate temperature have no effect on the isolation process, and the stability of isolation is related to defect clusters and not point-like defects.</p>