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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Manasreh, M. O.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Theoretical Investigations of the Structural, Dynamical, Electronic, Magnetic, and Thermoelectric Properties of CoMRhSi (M = Cr, Mn) Quaternary Heusler Alloyscitations
- 2014Uncooled photodetectors based on CdSe nanocrystals with an interdigital metallizationcitations
- 2013Colloidal growth, characterization and optoelectronic study of strong light absorbent inexpensive iron pyrite nanomaterials by using amine ligands for photovoltaic application
- 2004Intersubband Transitions in GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N Multi Quantum Wellscitations
- 2004Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scatteringcitations
- 2003Optical absorption of intersubband transitions in In0.3Ga0.7As/GaAs multiple quantum dotscitations
- 2003Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wellscitations
- 2002Ion-beam-produced damage and its stability in AlN filmscitations
- 2002Structural disorder in ion-implanted AlxGa1-xNcitations
- 2002Interband Transitions in GaInNAs/GaAs Single Quantum Wells
- 2001Optical Absorption of Nitrogen Vacancy in Proton Irradiated Al<sub>x</sub>Ga<sub>1-x</sub>N thin Films
- 2001Thermal Anneal Effects on Carbon-Hydrogen LVMs In AlGaN
- 2000Localized Vibrational Modes of Carbon-Hydrogen Complexes in MOCVD Grown GaN and AlGaN thin films
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article
Optical absorption of intersubband transitions in In0.3Ga0.7As/GaAs multiple quantum dots
Abstract
<jats:p>Fourier-transform infrared spectroscopy technique was employed to investigate the optical absorption coefficient of intersubband transitions in Si-doped In0.3Ga0.7As/GaAs multiple quantum dot structures. Waveguides with 45° polished facets were fabricated from molecular beam epitaxy grown wafers with different quantum dot size. The measured maximum optical absorption coefficient was found to be in the order of 1.10×104 cm−3. The peak position energy of the intersubband transition was observed to shift toward lower energy when the quantum dot size is increased as expected. The photoluminescence spectra were also measured for different samples with different quantum dot size. The internal quantum efficiency was estimated to be in the order of 58% for a sample with 40 periods of 6 nm dot size.</jats:p>