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Publications (4/4 displayed)
- 2015Analytic laboratory performance of a point of care urine culture kit for diagnosis and antibiotic susceptibility testingcitations
- 2003Proton-irradiation-induced intermixing of InGaAs quantum dotscitations
- 2002Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxidecitations
- 2002Ultrafast trapping times in ion implanted InPcitations
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article
Proton-irradiation-induced intermixing of InGaAs quantum dots
Abstract
<p>The interdiffusion processes in InGaAs quantum dots caused by proton irradiation and annealing were studied. Proton irradiation was used on a single layer of InGaAs quantum dots, grown by metalorganic chemical vapor deposition. Photoluminescence (PL) energy shifts were found to increase with proton dose for the doses studied. Implantation at elevated temperatures reduced the amount of PL energy shift, but enhanced recovery of the luminescence was observed.</p>