693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Lever, P.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2005In0.5 Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor depositioncitations
- 2004Characteristics of MOCVD-Grown thin p-clad InGaAs quantum-dot laserscitations
- 2004InGaAs quantum dots grown with GaP strain compensation layerscitations
- 2003Proton-irradiation-induced intermixing of InGaAs quantum dotscitations
- 2002Growth of InGaAs quantum dots by metal organic chemical vapour deposition
- 2002Production and processing of semiconductor nanocrystals and nanostructures for photonic applications
Places of action
| Organizations | Location | People |
|---|
article
Proton-irradiation-induced intermixing of InGaAs quantum dots
Abstract
<p>The interdiffusion processes in InGaAs quantum dots caused by proton irradiation and annealing were studied. Proton irradiation was used on a single layer of InGaAs quantum dots, grown by metalorganic chemical vapor deposition. Photoluminescence (PL) energy shifts were found to increase with proton dose for the doses studied. Implantation at elevated temperatures reduced the amount of PL energy shift, but enhanced recovery of the luminescence was observed.</p>