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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Ali, M. A. |
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Azevedo, Nuno Monteiro |
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Reece, P.
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article
Proton-irradiation-induced intermixing of InGaAs quantum dots
Abstract
<p>The interdiffusion processes in InGaAs quantum dots caused by proton irradiation and annealing were studied. Proton irradiation was used on a single layer of InGaAs quantum dots, grown by metalorganic chemical vapor deposition. Photoluminescence (PL) energy shifts were found to increase with proton dose for the doses studied. Implantation at elevated temperatures reduced the amount of PL energy shift, but enhanced recovery of the luminescence was observed.</p>