Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (4/4 displayed)

  • 2020Effects of the Heterointerface on the Growth Characteristics of a Brownmillerite SrFeO2.5 Thin Film Grown on SrRuO3 and SrTiO3 Perovskites19citations
  • 2018Layer-Dependent Photoelectrochemical Performance of Multi-Layer Graphene Catalysts on Silicon Photocathodecitations
  • 2007Simulation of the interaction between Fe impurities and point defects in V71citations
  • 2003Interatomic potential for vanadium suitable for radiation damage simulations80citations

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Jung, Chang Uk
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Nallagatlla, Venkata Raveendra
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Lee, Sangmin
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Jo, Janghyun
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Acharya, Susant Kumar
1 / 2 shared
Baik, Hionsuck
1 / 4 shared
Yoon, Sangmoon
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Kang, Youngho
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Kim, Yoonkoo
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Kim, Miyoung
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Hong, Byung Hee
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Jeon, Cheolho
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Moon, Joonhee
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Lee, Joohee
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Sim, Uk
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Nam, Ki Tae
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Ackland, Graeme J.
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Srolovitz, David
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Mendelev, Mikhail I.
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Son, Won-Joon
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Zepeda-Ruiz, Luis A.
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Car, Roberto
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Co-Authors (by relevance)

  • Jung, Chang Uk
  • Nallagatlla, Venkata Raveendra
  • Lee, Sangmin
  • Jo, Janghyun
  • Acharya, Susant Kumar
  • Baik, Hionsuck
  • Yoon, Sangmoon
  • Kang, Youngho
  • Kim, Yoonkoo
  • Kim, Miyoung
  • Hong, Byung Hee
  • Jeon, Cheolho
  • Moon, Joonhee
  • Lee, Joohee
  • Sim, Uk
  • Nam, Ki Tae
  • Ackland, Graeme J.
  • Srolovitz, David
  • Mendelev, Mikhail I.
  • Son, Won-Joon
  • Zepeda-Ruiz, Luis A.
  • Car, Roberto
OrganizationsLocationPeople

article

Interatomic potential for vanadium suitable for radiation damage simulations

  • Han, Seungwu
  • Zepeda-Ruiz, Luis A.
  • Ackland, Graeme J.
  • Car, Roberto
  • Srolovitz, David
Abstract

The ability to predict the behavior of point defects in metals, particularly interstitial defects, is central to accuratemodeling of the microstructural evolution in environments with high radiation fluxes. Existing interatomic potentials of embedded atom method type predict disparate stable interstitial defect configurations in vanadium. This is not surprising since accurate first-principles interstitial data were not available when these potentials were fitted. In order to provide the input information required to fit a vanadium potential appropriate for radiation damage studies, we perform a series of first-principles calculations on six different interstitial geometries and vacancies. These calculations identify the ^111& dumbbell as the most stable interstitial with a formation energy of approximately 3.1 eV, at variance with predictions based upon existing potentials. Our potential is of Finnis–Sinclair type and is fitted exactly to the experimental equilibrium lattice parameter, cohesive energy, elastic constants and a calculated unrelaxed vacancy formation energy. Two additional potential parameters were used to obtain the best fit to the set of interstitial formation energies determined from the first-principles calculations. The resulting potential was found to accurately predict both the magnitude and ordering of the formation energies of six interstitial configurations and the unrelaxed vacancy ground state, in addition to accurately describing the migration characteristics of the stable interstitial and vacancy. This vanadium potential is capable of describing the point defect properties appropriate for radiation damage simulations as well as for simulations of more common crystal and simple defect properties.

Topics
  • impedance spectroscopy
  • simulation
  • interstitial
  • vanadium
  • vacancy
  • point defect