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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Koinuma, H.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2005Improved stoichiometry and misfit control in perovskite thin film formation at a critical fluence by pulsed laser depositioncitations
- 2004High-resolution synchrotron-radiation photoemission characterization for atomically-controlled SrTiO3(001) substrate surfaces subjected to various surface treatmentscitations
- 2004Epitaxial growth and physical properties of a room temperature ferromagnetic semiconductor: Anatase phase Ti1−xCoxO2citations
- 2003A high-resolution synchrotron-radiation angle-resolved photoemission spectrometer with <i>in situ</i> oxide thin film growth capabilitycitations
- 2003Modeling and simulation of polycrystalline ZnO thin-film transistorscitations
- 2003Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layercitations
- 200345° rotational epitaxy of SrTiO3 thin films on sulfide-buffered Sicitations
- 2003Experimental investigation of ferromagnetism in II-VI disordered semiconducting compoundscitations
- 2003Quantitative control and detection of heterovalent impurities in ZnO thin films grown by pulsed laser depositioncitations
- 2002Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layerscitations
- 2002Vapor–liquid–solid tri-phase pulsed-laser epitaxy of RBa2Cu3O7−y single-crystal filmscitations
- 2002In-plane lattice constant tuning of an oxide substrate with Ba1−xSrxTiO3 and BaTiO3 buffer layerscitations
- 2002Systematic examination of carrier polarity in composition spread ZnO thin films codoped with Ga and Ncitations
- 2001Ferromagnetic interactions in p- and n-type II-VI diluted magnetic semiconductors
- 2001High-temperature goniometer for thin film growth and ion scattering studiescitations
- 2001Anatase TiO2 thin films grown on lattice-matched LaAlO3 substrate by laser molecular-beam epitaxycitations
- 2000In-plane anisotropic strain of ZnO closely packed microcrystallites grown on tilted (0001) sapphire
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article
Quantitative control and detection of heterovalent impurities in ZnO thin films grown by pulsed laser deposition
Abstract
<jats:p>Impurities in ZnO specimens, including targets for pulsed laser deposition and thin films resulting from their use, were analyzed by secondary ion mass spectroscopy (SIMS). Negatively charged complex ions bound with oxygen (71Ga16O− and N14O-16) were found to be the most reliable species with which to evaluate the Ga and N content of ZnO films by clarifying possible mass interference effects in SIMS analysis. Calibrations were carried out to determine the Ga concentration (CGa) and the nitrogen concentration (CN) by normalizing the signal intensities for G71O-16 and N14O-16, respectively, to that for Z70O-16. Alternative ablation of pure single crystal and Ga-doped ceramic ZnO targets was found to be effective not only for achieving systematic control of the Ga concentration in ZnO:(Ga,N) films, but also for minimizing the contamination of undesired impurities from the sintered targets. The substrate temperature plays a decisive role in control of CN due to a thermally activated desorption process of N-related species during deposition. Systematic control of the CN/CGa ratio in a ZnO:(Ga,N) film was carried out on a ScAlMgO4 substrate by introducing a controlled temperature gradient on the substrate during deposition. A region with the correct concentration ratio of CN/CGa=2, where p-type conduction of the ZnO film was theoretically predicted, was included in the composition spread sample in which the CN/CGa ratio was continuously varied over a wide range.</jats:p>