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Li, S. X.
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Publications (5/5 displayed)
- 2009Properties of native point defects in In1-xAlxN alloyscitations
- 2006Multiband GaNAsP quaternary alloyscitations
- 2006Structure and electronic properties of InN and In-rich group III-nitride alloyscitations
- 2004Group III-nitride alloys as photovoltaic materialscitations
- 2003Band-gap bowing effects in BxGa1-xAs alloyscitations
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article
Band-gap bowing effects in BxGa1-xAs alloys
Abstract
The effect of boron (B) on the electronic band structure of B<sub>x</sub>Ga<sub>1-x</sub>As alloys was investigated. It was found that under hydrostatic pressure, the band gap increases at a rate almost identical to the pressure dependence of the GaAs band gap. It was showed that B incorporation did not cause large modifications of the conduction-band structure in B<sub>x</sub>Ga<sub>1-x</sub>As alloys.