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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kucheyev, S. O.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2007Energetic Processing of Interstellar Silicate Grains by Cosmic Rayscitations
- 2005Ion irradiation-induced disordering of semiconductorscitations
- 2004Ion-beam-defect processes in group-III nitrides and ZnOcitations
- 2004Dynamic annealing in III-nitrides under ion bombardmentcitations
- 2004Lattice damage produced in GaN by swift heavy ionscitations
- 2003Ion-beam-produced structural defects in ZnOcitations
- 2002Electrical isolation of ZnO by ion bombardmentcitations
- 2002Ion-beam-produced damage and its stability in AlN filmscitations
- 2002Structural disorder in ion-implanted AlxGa1-xNcitations
- 2001Effect of ion species on the accumulation of ion-beam damage in GaN
- 2001Electrical isolation of GaN by MeV ion irradiationcitations
- 2001The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaNcitations
- 2001Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperaturescitations
- 2000Ion-beam-induced porosity of GaNcitations
- 2000Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardmentcitations
- 2000Ion-beam-induced dissociation and bubble formation in GaNcitations
- 2000Damage buildup in GaN under ion bombardmentcitations
- 2000Surface disordering and nitrogen loss in GaN under ion bombardment
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article
Electrical isolation of ZnO by ion bombardment
Abstract
<p>The evolution of sheet resistance of n-type single-crystal wurtzite ZnO epilayers exposed to bombardment with MeV <sup>1</sup>H, <sup>7</sup>Li, <sup>16</sup>O, and <sup>28</sup>Si ions at room temperature is studied in situ. We demonstrate that sheet resistance of ZnO can be increased by about 7 orders of magnitude as a result of ion irradiation. Due to extremely efficient dynamic annealing in ZnO, the ion doses needed for isolation of this material are about 2 orders of magnitude larger than corresponding doses in the case of another wide-bandgap semiconductor, GaN. Results also show that the ion doses necessary for electrical isolation close-to-inversely depend on the number of ion-beam-generated atomic displacements. However, in all the cases studied, defect-induced electrical isolation of ZnO is unstable to rapid thermal annealing at temperatures above ∼300°C.</p>