| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Shacham, Yosi
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2020Fracture strength and fatigue endurance in Gd-doped ceria thermal actuatorscitations
- 2019Femtosecond laser processing of ceria-based micro actuatorscitations
- 2018Towards fully polymeric electroactive micro actuators with conductive polymer electrodescitations
- 2012Nano-imprinting lithography of P(VDF-TrFE-CFE) for flexible freestanding MEMS devicescitations
- 2009Metallization technologies and strategies for plastic based biochips, sensors and actuators for healthcare and medical applicationscitations
- 2003Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallizationcitations
- 2003Structure of electroless deposited Co0.9W0.02P 0.08 thin films and their evolution with thermal annealingcitations
- 2003 The role of microstructure in nanocrystalline conformal Co 0.9 W 0.02 P 0.08 diffusion barriers for copper metallization citations
- 2002Improved diffusion barriers for copper metallization obtained by passivation of grain boundaries in electroless deposited cobalt-based filmscitations
- 2001Evaluation of electroless deposited Co(W,P) thin films as diffusion barriers for copper metallizationcitations
- 2001Characterization of electroless deposited Co (W,P) thin films for encapsulation of copper metallizationcitations
Places of action
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article
Improved diffusion barriers for copper metallization obtained by passivation of grain boundaries in electroless deposited cobalt-based films
Abstract
<p>The mechanism for improved barrier properties against copper diffusion in electroless deposited Co <sub>0.9</sub>W <sub>0.02</sub>P <sub>0.08</sub> and Co <sub>0.9</sub>P <sub>0.1</sub> thin films compared to physical vapor deposition (PVD) of cobalt is quantitatively explained. Secondary ion mass spectrometry depth profile measurements were performed on the films deposited on copper substrates after subjecting them to thermal anneals at approximately half the melting temperature of cobalt. A steady-state mode was observed in the form of concentration plateaus which originate from a combined contribution of grain-boundaries' saturation and copper solubility in the grains. The difference in plateau heights between the samples is assigned to the varying degrees of grain-boundaries' passivation. For Co <sub>0.9</sub>W <sub>0.02</sub>P <sub>0.08</sub>, the copper concentration in the grain boundaries is negligible and the solubility in the temperature region between 550 and 700°C may be described as C <sub>S</sub>≃6×10 <sup>2</sup>×exp(-0.52eV/kT) at.%. The higher-copper concentration plateaus in the Co <sub>0.9</sub>P <sub>0.1</sub> films are a result of a low, non-negligible copper concentration at the grain boundaries, estimated at less than 10 at.%. The copper concentration plateaus in PVD cobalt were significantly larger due to saturation of the grain boundaries.</p>