| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Koinuma, H.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2005Improved stoichiometry and misfit control in perovskite thin film formation at a critical fluence by pulsed laser depositioncitations
- 2004High-resolution synchrotron-radiation photoemission characterization for atomically-controlled SrTiO3(001) substrate surfaces subjected to various surface treatmentscitations
- 2004Epitaxial growth and physical properties of a room temperature ferromagnetic semiconductor: Anatase phase Ti1−xCoxO2citations
- 2003A high-resolution synchrotron-radiation angle-resolved photoemission spectrometer with <i>in situ</i> oxide thin film growth capabilitycitations
- 2003Modeling and simulation of polycrystalline ZnO thin-film transistorscitations
- 2003Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layercitations
- 200345° rotational epitaxy of SrTiO3 thin films on sulfide-buffered Sicitations
- 2003Experimental investigation of ferromagnetism in II-VI disordered semiconducting compoundscitations
- 2003Quantitative control and detection of heterovalent impurities in ZnO thin films grown by pulsed laser depositioncitations
- 2002Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layerscitations
- 2002Vapor–liquid–solid tri-phase pulsed-laser epitaxy of RBa2Cu3O7−y single-crystal filmscitations
- 2002In-plane lattice constant tuning of an oxide substrate with Ba1−xSrxTiO3 and BaTiO3 buffer layerscitations
- 2002Systematic examination of carrier polarity in composition spread ZnO thin films codoped with Ga and Ncitations
- 2001Ferromagnetic interactions in p- and n-type II-VI diluted magnetic semiconductors
- 2001High-temperature goniometer for thin film growth and ion scattering studiescitations
- 2001Anatase TiO2 thin films grown on lattice-matched LaAlO3 substrate by laser molecular-beam epitaxycitations
- 2000In-plane anisotropic strain of ZnO closely packed microcrystallites grown on tilted (0001) sapphire
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article
Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layers
Abstract
<jats:p>Photoluminescence (PL) and reflectivity spectra of ZnO epilayers capped with MgxZn1−xO layers (up to x=0.36) are reported. These capped films were epitaxially grown on lattice-matched ScAlMgO4 substrates by laser molecular-beam epitaxy. A photoluminescence spectrum from the ZnO layer taken at 5 K shows emission bands at 3.389, 3.376, and 3.362 eV. The two higher bands are due to A- and B-free exciton emissions and the lowest band is due to emission of a neutral-acceptor bound exciton (I6). The linewidth of the I6 emission in our uncapped sample (0.8 meV) is significantly smaller than that in the capped one (6 meV). This is probably due to strain applied across the ZnO layer because of the difference in lattice constant between the two layers. The spectral assignment of the free exciton emissions is strengthened by a comparison with a temperature-dependent PL study and a reflectivity study. With an increase in temperature, the intensity of the bound exciton emission line decreased drastically and became comparable to that of free exciton lines. Free exciton emissions are already detectable at the liquid He temperature for the capped samples, which is never achieved in the uncapped ones grown under identical conditions. This indicates the high degree of purity of the capped films.</jats:p>