| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zou, J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023A study on the effects of laser shock peening on the microstructure and substructure of Ti–6Al–4V manufactured by Selective Laser Meltingcitations
- 2016Pulsed Field Magnetization of Single-Grain Bulk YBCO Processed from Graded Precursor Powders
- 2016III-V compound semiconductor nanowires for optoelectronic device applicationscitations
- 2011III-V compound semiconductor nanowires for optoelectronic device applicationscitations
- 2009III-V compound semiconductor nanowirescitations
- 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
- 2004Dynamic annealing in III-nitrides under ion bombardmentcitations
- 2004Lattice damage produced in GaN by swift heavy ionscitations
- 2003Ion-beam-produced structural defects in ZnOcitations
- 2002Ion-beam-produced damage and its stability in AlN filmscitations
- 2001Effect of ion species on the accumulation of ion-beam damage in GaN
- 2001The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaNcitations
- 2001Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperaturescitations
- 2000Ion-beam-induced porosity of GaNcitations
- 2000Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardmentcitations
- 2000Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in siliconcitations
- 2000Damage buildup in GaN under ion bombardmentcitations
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article
Ion-beam-produced damage and its stability in AlN films
Abstract
<p>Structural characteristics of single-crystal wurtzite AlN epilayers (grown on sapphire substrates) bombarded with 300 keV <sup>197</sup>Au <sup>+</sup> ions at room and liquid-nitrogen temperatures (RT and LN <sub>2</sub>) are studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Results reveal extremely strong dynamic annealing of ion-beam-generated defects in AlN. Lattice amorphization is not observed even for very large doses of keV heavy ions at LN <sub>2</sub>. An increase in irradiation temperature from LN <sub>2</sub> to RT has a relatively small effect on the production of stable structural damage in AlN. In contrast to the case of Al <sub>x</sub>Ga <sub>1-x</sub>N with x≤0.6, neither damage saturation in the crystal bulk (below the random level) nor preferential surface disordering is revealed for AlN. Results also show that structural lattice disorder produced in AlN by high-dose keV heavy-ion bombardment is stable to rapid thermal annealing at temperatures as high as 1000°C.</p>