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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kucheyev, S. O.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2007Energetic Processing of Interstellar Silicate Grains by Cosmic Rayscitations
- 2005Ion irradiation-induced disordering of semiconductorscitations
- 2004Ion-beam-defect processes in group-III nitrides and ZnOcitations
- 2004Dynamic annealing in III-nitrides under ion bombardmentcitations
- 2004Lattice damage produced in GaN by swift heavy ionscitations
- 2003Ion-beam-produced structural defects in ZnOcitations
- 2002Electrical isolation of ZnO by ion bombardmentcitations
- 2002Ion-beam-produced damage and its stability in AlN filmscitations
- 2002Structural disorder in ion-implanted AlxGa1-xNcitations
- 2001Effect of ion species on the accumulation of ion-beam damage in GaN
- 2001Electrical isolation of GaN by MeV ion irradiationcitations
- 2001The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaNcitations
- 2001Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperaturescitations
- 2000Ion-beam-induced porosity of GaNcitations
- 2000Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardmentcitations
- 2000Ion-beam-induced dissociation and bubble formation in GaNcitations
- 2000Damage buildup in GaN under ion bombardmentcitations
- 2000Surface disordering and nitrogen loss in GaN under ion bombardment
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article
Ion-beam-produced damage and its stability in AlN films
Abstract
<p>Structural characteristics of single-crystal wurtzite AlN epilayers (grown on sapphire substrates) bombarded with 300 keV <sup>197</sup>Au <sup>+</sup> ions at room and liquid-nitrogen temperatures (RT and LN <sub>2</sub>) are studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Results reveal extremely strong dynamic annealing of ion-beam-generated defects in AlN. Lattice amorphization is not observed even for very large doses of keV heavy ions at LN <sub>2</sub>. An increase in irradiation temperature from LN <sub>2</sub> to RT has a relatively small effect on the production of stable structural damage in AlN. In contrast to the case of Al <sub>x</sub>Ga <sub>1-x</sub>N with x≤0.6, neither damage saturation in the crystal bulk (below the random level) nor preferential surface disordering is revealed for AlN. Results also show that structural lattice disorder produced in AlN by high-dose keV heavy-ion bombardment is stable to rapid thermal annealing at temperatures as high as 1000°C.</p>