| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Manasreh, M. O.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Theoretical Investigations of the Structural, Dynamical, Electronic, Magnetic, and Thermoelectric Properties of CoMRhSi (M = Cr, Mn) Quaternary Heusler Alloyscitations
- 2014Uncooled photodetectors based on CdSe nanocrystals with an interdigital metallizationcitations
- 2013Colloidal growth, characterization and optoelectronic study of strong light absorbent inexpensive iron pyrite nanomaterials by using amine ligands for photovoltaic application
- 2004Intersubband Transitions in GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N Multi Quantum Wellscitations
- 2004Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scatteringcitations
- 2003Optical absorption of intersubband transitions in In0.3Ga0.7As/GaAs multiple quantum dotscitations
- 2003Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wellscitations
- 2002Ion-beam-produced damage and its stability in AlN filmscitations
- 2002Structural disorder in ion-implanted AlxGa1-xNcitations
- 2002Interband Transitions in GaInNAs/GaAs Single Quantum Wells
- 2001Optical Absorption of Nitrogen Vacancy in Proton Irradiated Al<sub>x</sub>Ga<sub>1-x</sub>N thin Films
- 2001Thermal Anneal Effects on Carbon-Hydrogen LVMs In AlGaN
- 2000Localized Vibrational Modes of Carbon-Hydrogen Complexes in MOCVD Grown GaN and AlGaN thin films
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article
Ion-beam-produced damage and its stability in AlN films
Abstract
<p>Structural characteristics of single-crystal wurtzite AlN epilayers (grown on sapphire substrates) bombarded with 300 keV <sup>197</sup>Au <sup>+</sup> ions at room and liquid-nitrogen temperatures (RT and LN <sub>2</sub>) are studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Results reveal extremely strong dynamic annealing of ion-beam-generated defects in AlN. Lattice amorphization is not observed even for very large doses of keV heavy ions at LN <sub>2</sub>. An increase in irradiation temperature from LN <sub>2</sub> to RT has a relatively small effect on the production of stable structural damage in AlN. In contrast to the case of Al <sub>x</sub>Ga <sub>1-x</sub>N with x≤0.6, neither damage saturation in the crystal bulk (below the random level) nor preferential surface disordering is revealed for AlN. Results also show that structural lattice disorder produced in AlN by high-dose keV heavy-ion bombardment is stable to rapid thermal annealing at temperatures as high as 1000°C.</p>