693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mikolajick, Thomas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (92/92 displayed)
- 2024Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO₂citations
- 2024Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO<sub>2</sub>citations
- 2024High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Densitycitations
- 2023Strain as a global factor in stabilizing the ferroelectric properties of ZrO 2citations
- 2023Engineering of HZO layer for the fabrication of ultimate 3D vertical transistors for Memory-in-Logic applications M. Materials engineering for advanced semiconductor devices
- 2023Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Filmscitations
- 2023From Ferroelectric Material Optimization to Neuromorphic Devicescitations
- 2023Influence of the ozone dose time during atomic layer deposition on the ferroelectric and pyroelectric properties of 45 nm-thick ZrO 2 filmscitations
- 2023Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodescitations
- 2023Modulation Doping of Silicon Nanowires to Tune the Contact Properties of Nano-Scale Schottky Barrierscitations
- 2023Toward Nonvolatile Spin-Orbit Devicescitations
- 2022Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device.citations
- 2022Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene
- 2022An Analog Memristive and Memcapacitive Device for Neuromorphic Computingcitations
- 2022Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Filmscitations
- 2022Graph Coloring via Locally-Active Memristor Oscillatory Networkscitations
- 2022Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxidecitations
- 2022In situ studies on atomic layer etching of aluminum oxide using sequential reactions with trimethylaluminum and hydrogen fluoridecitations
- 2022MOx in ferroelectric memories
- 2022Assessment of Back-End-of-Line Compatibility of Sputtered HfO2-Based Ferroelectricscitations
- 2022Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Filmscitations
- 2022Oxygen vacancy concentration as a function of cycling and polarization state in TiN/Hf 0.5 Zr 0.5 O 2 /TiN ferroelectric capacitors studied by x-ray photoemission electron microscopycitations
- 2022Pushing Sputtered HfO2-Based Ferroelectrics toward BEOL Compatibilitycitations
- 2022Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2-Based Filmscitations
- 2021Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stackscitations
- 2021Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealingcitations
- 2021Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memoriescitations
- 2021Chemical Stability of IrO$_{2}$ Top Electrodes in Ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ ‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gascitations
- 2021Surface Preconditioning and Postmetallization Anneal Improving Interface Properties and Vth Stability under Positive Gate Bias Stress in AlGaN/GaN MIS-HEMTscitations
- 2021Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO$_2$ filmscitations
- 2020Magnetic and ferroelectric memoriescitations
- 2020Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructurescitations
- 2020Enhanced ferroelectric polarization in TiN/HfO2/TiN capacitors by interface designcitations
- 2020Influence of oxygen content on the structure and reliability of ferroelectric HfxZr1−xO2 layerscitations
- 2020Enhanced Ferroelectric Polarization in TiN/HfO$_{2}$/TiN Capacitors by Interface Designcitations
- 2019Local structural investigation of hafnia-zirconia polymorphs in powders and thin films by X-ray absorption spectroscopycitations
- 2019Multi-staged deposition of trench-gate oxides for power MOSFETscitations
- 2019Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effectcitations
- 2019Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconiumcitations
- 2019Ferroelectric field effect transistorcitations
- 2019Recent progress for obtaining the ferroelectric phase in hafnium oxide based filmscitations
- 2019Uniting The Trinity of Ferroelectric HfO₂ Memory Devices in a Single Memory Cellcitations
- 2019Uniting the trinity of ferroelectric HfO2 memory devices in a single memory cellcitations
- 2018Review and perspective on ferroelectric HfO₂-based thin films for memory applicationscitations
- 2018Effect of Annealing Ferroelectric HfO₂ Thin Films: In Situ, High Temperature X-Ray Diffractioncitations
- 2018Origin of Temperature-Dependent Ferroelectricity in SiDoped HfO₂citations
- 2018Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensorscitations
- 2018Hafnium oxide based ferroelectric devices for memories and beyondcitations
- 2018Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistorscitations
- 2018Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂citations
- 2018Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO₂: a first principles studycitations
- 2017Human alpha-thrombin detection platform using aptamers on a silicon nanowire field-effect transistor
- 2017In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETscitations
- 2016Printable Parallel Arrays of Si Nanowire Schottky-Barrier-FETs With Tunable Polarity for Complementary Logiccitations
- 2016Compact Nanowire Sensors Probe Microdropletscitations
- 2016An Energy-Efficient, BiFeO3-Coated Capacitive Switch with Integrated Memory and Demodulation Functionscitations
- 2016Sulphur sensitive galvanic cells for the float glass process
- 2015Flexible Electronics: Light Weight and Flexible High-Performance Diagnostic Platform (Adv. Healthcare Mater. 10/2015)citations
- 2015Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowirescitations
- 2015Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applicationscitations
- 2015Optoelectronic switching of nanowire-based hybrid organic/oxide/semiconductor field-effect transistorscitations
- 2015Effect of the stoichiometry of niobium oxide on the resistive switching of Nb2O5 based metal-insulator-metal stackscitations
- 2015Energy monitoring of high dose ion implantation in semiconductors via photocurrent measurement
- 2015Via hole conditioning in silicon heterojunction metal wrap through solar cells
- 2014Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristorscitations
- 2014Ionic effects on the transport characteristics of nanowire-based FETs in a liquid environmentcitations
- 2014Conduction mechanisms and breakdown characteristics of Al2O 3-doped ZrO2 high-k dielectrics for three-dimensional stacked metal-insulator-metal capacitorscitations
- 2014Near surface inversion layer recombination in Al2O3 passivated n -type siliconcitations
- 2014Atomic layer deposited high-κ nanolaminates for silicon surface passivationcitations
- 2013Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shuntscitations
- 2013Millisecond flash lamp annealing for LaLuO3 and LaScO 3 high-k dielectricscitations
- 2013Parallel arrays of Schottky barrier nanowire field effect transistors: Nanoscopic effects for macroscopic current outputcitations
- 2013Channel length dependent sensor response of Schottky-barrier FET pH sensorscitations
- 2013Sponge-like Si-SiO2 nanocomposite - Morphology studies of spinodally decomposed silicon-rich oxidecitations
- 2013Structural and dielectric properties of sputtered SrxZr (1-x)Oycitations
- 2013Silicon nanowires - a versatile technology platformcitations
- 2012Thermally activated crystallization of Nb 2O 5 grown on Pt electrodecitations
- 2012Incipient ferroelectricity in Al-doped HfO2 thin filmscitations
- 2011Macroscopic and microscopic electrical characterizations of high-k ZrO 2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structurescitations
- 2011Applicability of molecular beam deposition for the growth of high-k oxidescitations
- 2011Optical characterization of three-dimensional structures within a DRAM capacitor
- 2011Control of rectifying and resistive switching behavior in BiFeO3 thin filmscitations
- 2011Reduced leakage current in BiFeO3 thin films with rectifying contactscitations
- 2011Multiscale modeling of nanowire-based Schottky-barrier field-effect transistors for sensor applicationscitations
- 2011Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistorcitations
- 2010Nanocrystalline materials - Optimization of thin film properties
- 2003SrBi2Ta2O9 ferroelectric thin film capacitorscitations
- 2003Alkali- and hydrogen ion sensing properties of LPCVD silicon oxynitride thin filmscitations
- 2002Influence of deposition conditions on Ir/IrO 2 oxygen barrier effectivenesscitations
- 2002Platinum contamination issues in ferroelectric memoriescitations
- 2001Thickness dependent morphology and electrical characteristics of SrBi 2Ta2O9 deposited by metal organic decompositioncitations
- 2001An overview of FeRAM technology for high density applications
Places of action
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article
Platinum contamination issues in ferroelectric memories
Abstract
<p>The contamination risk of processing with platinum electrodes on device performance in ferroelectric memories is assessed in this work. Details of platinum diffusion to the active regions at annealing temperatures of 800°C are investigated by secondary ion mass spectroscopy, deep level transient spectroscopy, and Rutherford backscattering spectrometry techniques. Cross sectional transmission electron microscopy and local elemental analysis by energy dispersive x-ray spectroscopy were used to examine the precipitation of Pt in defect free silicon as an eventual cause of gate oxide degradation. The impact of platinum contamination on device performance is evaluated under the typical ferroelectric memory processing conditions. Results from leakage current and charge to breakdown measurements of intentionally contaminated diode and metal-oxide-semiconductor (MOS) structures, respectively, are presented. The results show that the degradation depends strongly on device design and configuration. A phosphorus doped polysilicon plug, which has the function of connecting the select transistor to the capacitor module, provides effective gettering regions and prevents the diffusion of Pt atoms to the active regions. Under typical processing conditions, no evident Pt precipitates were observed and up to a concentration level of 4×10 <sup>14</sup>atoms/cm <sup>2</sup>, the leakage current of intentionally contaminated diodes does not increase, if the contamination occurs after front-end phosphorus doped poly-Si processing. Results from constant current charge to breakdown show a small number of breakdown events due to redeposition of Pt at the periphery of the MOS structure. The risk of processing with Pt electrodes in ferroelectric memories requires great care. Precautions like sealing the back surface and incorporating phosphorus doped polysilicon as the plug material are necessary to avoid the detrimental effects of Pt.</p>