| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Odonnell, Kevin
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2019Room temperature cathodoluminescence quenching of Er3+ in AlNOErcitations
- 2015Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixingcitations
- 2012Photoluminescence of Eu-doped GaNcitations
- 2012Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping
- 2010Al1-xInxN/GaN bilayers: Structure, morphology, and optical propertiescitations
- 2009Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition rangecitations
- 2008Rare earth doping of III-nitride alloys by ion implantationcitations
- 2006Rare earth doped III-nitrides for optoelectronicscitations
- 2006Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN
- 2005Selectively excited photoluminescence from Eu- implanted GaNcitations
- 2004Development of CdSSe/CdS VCSELs for application to laser cathode ray tubes
- 2002Structural and optical properties of InGaN/GaN layers close to the critical layer thicknesscitations
- 2002Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixingcitations
- 2002Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mappingcitations
- 2001Compositional pulling effects in InxGa1_xN/GaN layerscitations
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article
Structural and optical properties of InGaN/GaN layers close to the critical layer thickness
Abstract
In this work, we investigate structural and optical properties of metalorganic chemical vapor deposition grown wurtzite InxGa1−xN/GaN epitaxial layers with thicknesses that are close to the critical layer thickness (CLT) for strain relaxation. CLT for InxGa1−xN/GaN structures was calculated as a function of the InN content, x, using the energy balance model proposed by People and Bean [Appl. Phys. Lett. 47, 322 (1985)]. Experimentally determined CLT are in good agreement with these calculations. The occurrence of discontinuous strain relaxation (DSR), when the CLT is exceeded, is revealed in the case of a 120 nm thick In0.19Ga0.89N layer by x-ray reciprocal space mapping of an asymmetrical reflection. The effect of DSR on the luminescence of this layer is clear: The luminescence spectrum shows two peaks centered at ∼2.50 and ∼2.67 eV, respectively. These two components of the luminescence of the sample originate in regions of different strain, as discriminated by depth-resolving cathodoluminescence spectroscopy. DSR leads directly to the emergence of the second, lower-energy, peak. Based on this experimental evidence, it is argued that the appearance of luminescence doublets in InGaN is not evidence of “quantum dotlike In-rich” or “phase separated” regions, as commonly proposed.