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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Furdyna, J. K.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2012Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity bandcitations
- 2008Fermi Level Effects on Mn Incorporation in III-Mn-V Ferromagnetic Semiconductorscitations
- 2005Effects of Mn site Location on the magnetic properties of III 1-xMn xV semiconductors
- 2004Resonant spectroscopy of II-VI self-assembled quantum dots: Excited states and exciton-longitudinal optical phonon couplingcitations
- 2004Fermi level effects on Mn incorporation in modulation-doped ferromagnetic III1-xMnxV heterostructurescitations
- 2004Determination of hole-induced ferromagnetic Mn-Mn exchange in p-type Zn1-xMnxTe by inelastic neutron scatteringcitations
- 2004Determination of hole-induced ferromagnetic exchange between nearest-neighbor Mn spins in p-type Zn1-xMnxTe
- 2004Electronic effects determining the formation of ferromagnetic III 1-xMnx V alloys during epitaxial growthcitations
- 2004Lattice location of Mn and fundamental Curie temperature limit in ferromagnetic Ga1-xMnxAscitations
- 2003Probing hole-induced ferromagnetic exchange in magnetic semiconductors by inelastic neutron scatteringcitations
- 2003Curie temperature limit in ferromagnetic Ga1-xMnxAs
- 2003Ferromagnetic III-Mn-V semiconductors
- 2002Growth and optical properties of Mn-containing II-VI quantum dots
- 2002Determination of free hole concentration in ferromagnetic Ga 1-xMnxAs using electrochemical capacitance-voltage profilingcitations
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article
Determination of free hole concentration in ferromagnetic Ga 1-xMnxAs using electrochemical capacitance-voltage profiling
Abstract
We demonstrate that electrochemical capacitance-voltage profiling can be used to determine the free hole concentration in heavily p-type doped low-temperature-grown GaAs films. This provides a simple and reliable method for measuring the hole concentration in ferromagnetic Ga<sub>1-x</sub>Mn <sub>x</sub>As semiconductor alloys. The method overcomes the complications that arise from the anomalous Hall effect term which affects standard transport studies of carrier concentration in conducting ferromagnetic materials. Specifically, we find that the maximum Curie temperature of about 111 K found for our Ga<sub>0.91</sub>Mn<sub>0.09</sub>As samples corresponds to a hole concentration of 10<sup>21</sup>cm<sup>-3</sup>. © 2002 American Institute of Physics.