Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Dobrowolska, M.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (6/6 displayed)

  • 2012Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band177citations
  • 2004Resonant spectroscopy of II-VI self-assembled quantum dots: Excited states and exciton-longitudinal optical phonon coupling31citations
  • 2004Lattice location of Mn and fundamental Curie temperature limit in ferromagnetic Ga1-xMnxAs7citations
  • 2003Curie temperature limit in ferromagnetic Ga1-xMnxAscitations
  • 2002Growth and optical properties of Mn-containing II-VI quantum dotscitations
  • 2002Determination of free hole concentration in ferromagnetic Ga 1-xMnxAs using electrochemical capacitance-voltage profiling50citations

Places of action

Chart of shared publication
Walukiewicz, W.
4 / 87 shared
Liu, X.
4 / 54 shared
Furdyna, J. K.
6 / 14 shared
Tivakornsasithorn, K.
1 / 1 shared
Berciu, M.
1 / 1 shared
Karczewski, G.
2 / 41 shared
Heiss, Wolfgang
2 / 221 shared
Mackowski, S.
1 / 28 shared
Jackson, H. E.
1 / 16 shared
Kossut, J.
2 / 17 shared
Frone, K.
1 / 1 shared
Wrobel, J.
1 / 30 shared
Smith, L. M.
1 / 15 shared
Nguyen, T. A.
1 / 4 shared
Wojtowicz, T.
3 / 35 shared
Lim, W. L.
3 / 4 shared
Bindley, U.
1 / 1 shared
Lee, S.
1 / 37 shared
Prechtl, G.
1 / 19 shared
Maćkowski, S.
1 / 2 shared
Sasaki, Y.
1 / 3 shared
Chart of publication period
2012
2004
2003
2002

Co-Authors (by relevance)

  • Walukiewicz, W.
  • Liu, X.
  • Furdyna, J. K.
  • Tivakornsasithorn, K.
  • Berciu, M.
  • Karczewski, G.
  • Heiss, Wolfgang
  • Mackowski, S.
  • Jackson, H. E.
  • Kossut, J.
  • Frone, K.
  • Wrobel, J.
  • Smith, L. M.
  • Nguyen, T. A.
  • Wojtowicz, T.
  • Lim, W. L.
  • Bindley, U.
  • Lee, S.
  • Prechtl, G.
  • Maćkowski, S.
  • Sasaki, Y.
OrganizationsLocationPeople

article

Determination of free hole concentration in ferromagnetic Ga 1-xMnxAs using electrochemical capacitance-voltage profiling

  • Walukiewicz, W.
  • Wojtowicz, T.
  • Liu, X.
  • Furdyna, J. K.
  • Sasaki, Y.
  • Dobrowolska, M.
  • Lim, W. L.
Abstract

We demonstrate that electrochemical capacitance-voltage profiling can be used to determine the free hole concentration in heavily p-type doped low-temperature-grown GaAs films. This provides a simple and reliable method for measuring the hole concentration in ferromagnetic Ga<sub>1-x</sub>Mn <sub>x</sub>As semiconductor alloys. The method overcomes the complications that arise from the anomalous Hall effect term which affects standard transport studies of carrier concentration in conducting ferromagnetic materials. Specifically, we find that the maximum Curie temperature of about 111 K found for our Ga<sub>0.91</sub>Mn<sub>0.09</sub>As samples corresponds to a hole concentration of 10<sup>21</sup>cm<sup>-3</sup>. © 2002 American Institute of Physics.

Topics
  • semiconductor
  • Curie temperature