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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Gregg, Marty
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (43/43 displayed)
- 2024Observation of antiferroelectric domain walls in a uniaxial hyperferroelectriccitations
- 2023Ferroelectric domain wall p-n junctionscitations
- 2022Conducting ferroelectric domain walls emulating aspects of neurological behaviorcitations
- 2021Influence of charged walls and defects on DC resistivity and dielectric relaxations in Cu-Cl boracite
- 2021An empirical approach to measuring interface energies in mixed-phase bismuth ferritecitations
- 2020Lead palladium zirconate titanate: A room temperature nanoscale multiferroic thin filmcitations
- 2020Nanodomain Patterns in Ultra-Tetragonal Lead Titanate (PbTiO3)citations
- 2019Studies of Multiferroic Palladium Perovskitescitations
- 2017Non-equilibrium ferroelectric-ferroelastic 10nm nanodomains: wrinkles, period-doubling and power-law relaxationcitations
- 2017Mapping grain boundary heterogeneity at the nanoscale in a positive temperature coefficient of resistivity ceramiccitations
- 2017Superdomain dynamics in ferroelectric-ferroelastic films: Switching, jamming and relaxationcitations
- 2014Studies of the Room-Temperature Multiferroic Pb(Fe0.5Ta0.5)0.4(Zr0.53Ti0.47)0.6O3: Resonant Ultrasound Spectroscopy, Dielectric, and Magnetic Phenomenacitations
- 2013A Lead-Free and High-Energy Density Ceramic for Energy Storage Applicationscitations
- 2012Increasing recoverable energy storage in electroceramic capacitors using "dead-layer" engineeringcitations
- 2010Synthesis of epitaxial metal oxide nanocrystals via a phase separation approachcitations
- 2009Settling the ‘‘Dead Layer’’ Debate in Nanoscale Capacitorscitations
- 2009Effect of wall thickness on the ferroelastic domain size of BaTiO3citations
- 2009The Influence of Point Defects and Inhomogeneous Strain on the Functional Behaviour of Thin film Ferroelectricscitations
- 2009Origin of Ferroelastic domains in Free-Standing Single Crystal Ferroelectric Filmscitations
- 2008CH022
- 2007Toward Self-Assembled Ferroelectric Random Access Memories: Hard-Wired Switching Capacitor Arrays with Almost Tb/in.2 Densitiescitations
- 2007Nanoscale ferroelectrics machined from single crystalscitations
- 2006Perovskite lead zirconium titanate nanorings: Towards nanoscale ferroelectriccitations
- 2006Scaling of domain periodicity with thickness measured in BaTiO3 single crystal lamellae and comparison with other ferroicscitations
- 2004Understanding thickness effects in thin film capacitorscitations
- 2004The effect of flexoelectricity on the dielectric properties of inhomogeneously strained ferroelectric thin filmscitations
- 2004Thickness independence of true phase transition temperatures in barium strontium titanate filmscitations
- 2004Intrinsic dielectric response in ferroelectric nano-capacitorscitations
- 2004Progressive loss of ferroelectricity under bipolar pulsed fields and experimental determination of non-switchable polarization in Au/Ba0.5Sr0.5TiO3/SrRuO3 thin-film capacitors
- 2004Thin film capacitor cut from single crystals using focused ion beam millingcitations
- 2004Effects of poling, and implications for metastable phase behavior in barium strontium titanate thin film capacitorscitations
- 2004Characteristics of the interfacial capacitance in thin film Ba0.5Sr0.5TiO3 capacitors with SrRuO3 and (La, Sr)CoO3 bottom electrodescitations
- 2004Maximum of dielectric permittivity caused by structural transition in ferroelectric BaTiO3-SrTiO3 superlattices
- 2003Evidence for two-phase regions in BST thin films from capacitance-voltage datacitations
- 2003Studies of switching kinetics in ferroelectric thin filmscitations
- 2003Dielectric and electromechanical properties of Pb(Mg-1/3,Nb- 2/3)O-3-PbTiO3 thin films grown by pulsed laser depositioncitations
- 2002Electrode field penetration: A new interpretation of tunneling currents in barium strontium titanate (BST) thin films
- 2002Exploring grain size as a cause for dead-layer effects in thin film capacitorscitations
- 2002Thickness-induced stabilization of ferroelectricity in SrRuO3/Ba0.5Sr0.5TiO3/Au thin film capacitorscitations
- 2002Switching dynamics in ferroelectric thin films: An experimental survey
- 2002Electromechanical properties of Pb(Mg1/3Nb2/3)O-3-7%PbTiO3 thin films made by pulsed laser depositioncitations
- 2001Investigation of dead-layer thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au thin-film capacitorscitations
- 2001Enhancement of dielectric constant and associated coupling of polarization behavior in thin film relaxor superlatticescitations
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article
Exploring grain size as a cause for dead-layer effects in thin film capacitors
Abstract
Pulsed laser deposition was used to make a series of Au/Ba0.5Sr0.5TiO3 (BST)/SrRuO3/MgO thin film capacitors with dielectric thickness ranging from similar to15 nm to similar to1 mum. Surface grain size of the dielectric was monitored as a function of thickness using both atomic force microscopy and transmission electron microscopy. Grain size data were considered in conjunction with low field dielectric constant measurements. It was observed that the grain size decreased with decreasing thickness in a manner similar to the dielectric constant. Simple models were developed in which a functionally inferior layer at the grain boundary was considered as responsible for the observed dielectric behavior. If a purely columnar microstructure was assumed, then constant thickness grain-boundary dead layers could indeed reproduce the series capacitor dielectric response observed, even though such layers would contribute electrically in parallel with unaffected bulk- like BST. Best fits indicated that the dead layers would have a relative dielectric constant similar to40, and thickness of the order of tens of nanometers. For microstructures that were not purely columnar, models did not reproduce the observed dielectric behavior well. However, cross-sectional transmission electron microscopy indicated columnar microstructure, suggesting that grain boundary dead layers should be considered seriously in the overall dead-layer debate. (C) 2002 American Institute of Physics.