Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (3/3 displayed)

  • 2009Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing7citations
  • 2002Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide34citations
  • 2002Ultrafast trapping times in ion implanted InP9citations

Places of action

Chart of shared publication
Coleman, V. A.
1 / 5 shared
Koike, K.
1 / 15 shared
Hannaford, P.
1 / 1 shared
Davis, J. A.
1 / 1 shared
Wen, Xiaoming
1 / 7 shared
Inoue, M.
1 / 4 shared
Sasa, S.
1 / 3 shared
Yano, M.
1 / 16 shared
Deenapanray, P. N. K.
1 / 7 shared
Gal, M.
2 / 4 shared
Gong, Bin
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Lamb, R. N.
1 / 1 shared
Cohen, R. M.
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Reichert, W.
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Lederer, M. J.
1 / 2 shared
Boudinov, H.
1 / 3 shared
Carmody, C.
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Kolev, V.
1 / 1 shared
Chart of publication period
2009
2002

Co-Authors (by relevance)

  • Coleman, V. A.
  • Koike, K.
  • Hannaford, P.
  • Davis, J. A.
  • Wen, Xiaoming
  • Inoue, M.
  • Sasa, S.
  • Yano, M.
  • Deenapanray, P. N. K.
  • Gal, M.
  • Gong, Bin
  • Lamb, R. N.
  • Cohen, R. M.
  • Reichert, W.
  • Lederer, M. J.
  • Boudinov, H.
  • Carmody, C.
  • Kolev, V.
OrganizationsLocationPeople

article

Ultrafast trapping times in ion implanted InP

  • Gal, M.
  • Lederer, M. J.
  • Dao, L. V.
  • Boudinov, H.
  • Carmody, C.
  • Kolev, V.
Abstract

<p>As <sup>+</sup> and P <sup>+</sup> implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1×10 <sup>16</sup>cm <sup>-2</sup> and p-type InP was implanted with doses between 1×10 <sup>12</sup> and 1×10 <sup>16</sup>cm <sup>-2</sup>. Subsequently, rapid thermal annealing at temperatures between 400 and 700°C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implanted p-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity.</p>

Topics
  • resistivity
  • mobility
  • x-ray diffraction
  • annealing
  • size-exclusion chromatography