| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Morrison, Finlay D.
University of St Andrews
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (39/39 displayed)
- 2022Structural, magnetic, and electrical properties of Bi1-xLaxMnO3 (x=0.0, 0.1, and 0.2) solid solutionscitations
- 2022Magnetically driven dielectric and structural behavior in Bi0.5La0.5FeO3citations
- 2020Stable 6H organic-inorganic hybrid lead perovskite and competitive formation of 6H and 3C perovskite structure with mixed A cationscitations
- 2019Stable 6H organic-inorganic hybrid lead perovskite and competitive formation of 6H and 3C perovskite structure with mixed A cationscitations
- 2018Quantum critical points in ferroelectric relaxors : stuffed tungsten bronze K3Li2Ta5O15 and lead pyrochlore (Pb2Nb2O7)citations
- 2018Quantum critical points in ferroelectric relaxors: Stuffed tungsten bronze K3Li2Ta5O15 and lead pyrochlore ( Pb2Nb2O7 )citations
- 2018Quantum critical points in ferroelectric relaxors:stuffed tungsten bronze K 3 Li 2 Ta 5 O 15 and lead pyrochlore (Pb 2 Nb 2 O 7 )citations
- 2017Microstructural and high-temperature impedance spectroscopy study of Ba6MNb9O30 (M=Ga, Sc, In) relaxor dielectric ceramics with tetragonal tungsten bronze structurecitations
- 2016Microstructural and high-temperature impedance spectroscopy study of Ba 6 MNb 9 O 30 (M=Ga, Sc, In) relaxor dielectric ceramics with tetragonal tungsten bronze structurecitations
- 2016Microstructural and high-temperature impedance spectroscopy study of Ba6MNb9O30 (M=Ga, Sc, In) relaxor dielectric ceramics with tetragonal tungsten bronze structurecitations
- 2016Manipulation of polar order in the “empty” tetragonal tungsten bronzes: Ba4-xSrxDy0.671.33Nb10O30, x = 0, 0.25, 0.5, 1, 2, 3citations
- 2016Manipulation of polar order in the “empty” tetragonal tungsten bronzes: Ba 4-x Sr x Dy 0.67 1.33 Nb 10 O 30 , x = 0, 0.25, 0.5, 1, 2, 3citations
- 2016Vogel-Fulcher analysis of relaxor dielectrics with the tetragonal tungsten bronze structure : Ba6MNb9O30 (M = Ga, Sc, In)citations
- 2015Effect of local A-site strain on dipole stability in A 6 GaNb 9 O 30 (A = Ba, Sr, Ca) tetragonal tungsten bronze relaxor dielectricscitations
- 2015Vogel-Fulcher analysis of relaxor dielectrics with the tetragonal tungsten bronze structure:Ba 6 MNb 9 O 30 (M = Ga, Sc, In)citations
- 2015Effect of local A-site strain on dipole stability in A6GaNb9O30 (A = Ba, Sr, Ca) tetragonal tungsten bronze relaxor dielectricscitations
- 2015Vogel-Fulcher analysis of relaxor dielectrics with the tetragonal tungsten bronze structurecitations
- 2012Structural, magnetic, and electrical properties of Bi 1-x La x MnO 3 (x=0.0, 0.1, and 0.2) solid solutionscitations
- 2012Magnetically driven dielectric and structural behavior in Bi 0.5 La 0.5 FeO 3citations
- 2012Structural, magnetic, and electrical properties of Bi1-xLaxMnO3 (x=0.0, 0.1, and 0.2) solid solutionscitations
- 2012Structural, magnetic and electrical properties of the hexagonal ferrites MFeO3 (M=Y, Yb, In)citations
- 2012Magnetically driven dielectric and structural behavior in Bi0.5La0.5FeO3citations
- 2009Leakage and Proton Conductivity in the Predicted Ferroelectric CsBiNb 2 O 7citations
- 2009Leakage and Proton Conductivity in the Predicted Ferroelectric CsBiNb2O7citations
- 2009Impedance spectroscopy studies on polycrystalline BiFeO3 thin films on Pt/Si substratescitations
- 2008Size effects on thin film ferroelectrics: Experiments on isolated single crystal sheetscitations
- 2008Submicron three-dimensional trenched electrodes and capacitors for DRAMs and FRAMscitations
- 2007Toward Self-Assembled Ferroelectric Random Access Memories:Hard-Wired Switching Capacitor Arrays with Almost Tb/in.2 Densitiescitations
- 2007Nanoscale ferroelectrics machined from single crystalscitations
- 2006Investigating the effects of reduced size on the properties of ferroelectricscitations
- 2005Exploring the fundamental effects of miniaturisation on ferroelectrics by focused ion beam processing of single crystal materialcitations
- 2005High-field conduction in barium titanatecitations
- 2005Recent materials characterizations of [2D] and [3D] thin film ferroelectric structurescitations
- 2004Intrinsic dielectric response in ferroelectric nano-capacitorscitations
- 2004Novel high capacitance materials: BaTiO3 : La and CaCu3Ti4O12citations
- 2003Ferroelectric nanotubes
- 2003New developments in ferroelectric thin filmscitations
- 2002CaCu3Ti4O12: One-step internal barrier layer capacitorcitations
- 2001Characterization of lanthanum-doped barium titanate ceramics using impedance spectroscopy
Places of action
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article
CaCu3Ti4O12: One-step internal barrier layer capacitor
Abstract
There has been much recent interest in a so-called "giant-dielectric phenomenon" displayed by an unusual cubic perovskite-type material, CaCu3Ti4O12; however, the origin of the high permittivity has been unclear [M. A. Subramanian, L. Dong, N. Duan, B. A. Reisner, and A. W. Sleight, J. Solid State Chem. 151, 323 (2000); C. C. Homes, T. Vogt, S. M. Shapiro, S. Wakimoto, and A. P. Ramirez, Science 293, 673 (2001); A. P. Ramirez, M. A. Subramanian, M. Gardel, G. Blumberg, D. Li, T. Vogt, and S. M. Shapiro, Solid State Commun. 115, 217 (2000)]. Impedance spectroscopy on CaCu3Ti4O12 ceramics demonstrates that they are electrically heterogeneous and consist of semiconducting grains with insulating grain boundaries. The giant-dielectric phenomenon is therefore attributed to a grain boundary (internal) barrier layer capacitance (IBLC) instead of an intrinsic property associated with the crystal structure. This barrier layer electrical microstructure with effective permittivity values in excess of 10 000 can be fabricated by single-step processing in air at similar to1100 degreesC. CaCu3Ti4O12 is an attractive option to the currently used BaTiO3-based materials which require complex, multistage processing routes to produce IBLCs of similar capacity. (C) 2002 American Institute of Physics.