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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kroger, Roland
University of York
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2016Semiconductor-Metal Nano-Floret Hybrid Structures by Self-Processing Synthesiscitations
- 2013Microstructural evolution and nanoscale crystallography in scleractinian coral spherulitescitations
- 2013Formation and Structure of Calcium Carbonate Thin Films and Nanofibers Precipitated in the Presence of Poly(Allylamine Hydrochloride) and Magnesium Ionscitations
- 2011An artificial biomineral formed by incorporation of copolymer micelles in calcite crystalscitations
- 2008Interaction of Stacking Faults in Wurtzite a-Plane GaN on r-Plane Sapphire
- 2008The role of anisotropy for defect properties in a-plane GaN
- 2008The role of anisotropy for the defect properties in a-plane GaN - art. no. 689403
- 2007On the mechanism of dislocation and stacking fault formation in a-plane GaN films grown by hydride vapor phase epitaxy
- 2007Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphirecitations
- 2006The versatility of hot-filament activated chemical vapor depositioncitations
- 2006Anti-diffusion barriers for gold-based metallizations to p-GaN
- 2006TEM analyses of wurtzite InGaN islands grown by MOVPE and MBEcitations
- 2006Anisotropic spatial correlation of CdSe/Zn(S)Se quantum dot stacks grown by MBEcitations
- 2006Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by X-ray photoemission spectro-microscopycitations
- 2005Surfactant-mediated epitaxy of Ge on Si(111)citations
- 2005Microstructure of highly p-type doped GaN sub-contact layers for low-resistivity contacts
- 2004Determination of the anisotropic optical properties for perfluorinated vanadyl phthalocyanine thin filmscitations
- 2004Microstructural study of quantum well degradation in ZnSe-based laser diodes
- 2002On the way to the II-VI quantum dot VCSELcitations
- 2002Plasma induced microstructural, compositional, and resistivity changes in ultrathin chemical vapor deposited titanium nitride filmscitations
Places of action
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article
Plasma induced microstructural, compositional, and resistivity changes in ultrathin chemical vapor deposited titanium nitride films
Abstract
Extremely thin titanium nitride (TiN) barrier layers for Cu based interconnects were deposited using metal organic chemical vapor deposition. The effect of the subsequently performed nitrogen/hydrogen plasma treatment on the microstructure, composition, and electrical properties of these films is studied using conventional and high resolution transmission electron microscopy, Auger electron spectroscopy, and four point probe resistivity measurements. In the studied system the crystallization of the TiN film starts from an amorphous matrix and a polycrystalline morphology is developed upon the H2/N2 plasma treatment. After a short plasma treatment, most of the film is already crystalline and consists of grains of a few nanometers in diameter. Continued plasma treatment leads to grain growth and a significant reduction of contaminants such as oxygen and carbon. The resistivity of the films drops with plasma treatment time, and a correlation between resistivity and oxygen content is found, which suggests that oxygen in the grain boundaries plays a decisive role for the resistivity of the films. It is shown that the oxygen in the grain boundaries leads to an electron reflectance of 0.9. Thus, the oxygen accumulation in the grain boundaries is the limiting factor for the reduction of film resistivity by plasma treatment.