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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Manasreh, M. O.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Theoretical Investigations of the Structural, Dynamical, Electronic, Magnetic, and Thermoelectric Properties of CoMRhSi (M = Cr, Mn) Quaternary Heusler Alloyscitations
- 2014Uncooled photodetectors based on CdSe nanocrystals with an interdigital metallizationcitations
- 2013Colloidal growth, characterization and optoelectronic study of strong light absorbent inexpensive iron pyrite nanomaterials by using amine ligands for photovoltaic application
- 2004Intersubband Transitions in GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N Multi Quantum Wellscitations
- 2004Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scatteringcitations
- 2003Optical absorption of intersubband transitions in In0.3Ga0.7As/GaAs multiple quantum dotscitations
- 2003Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wellscitations
- 2002Ion-beam-produced damage and its stability in AlN filmscitations
- 2002Structural disorder in ion-implanted AlxGa1-xNcitations
- 2002Interband Transitions in GaInNAs/GaAs Single Quantum Wells
- 2001Optical Absorption of Nitrogen Vacancy in Proton Irradiated Al<sub>x</sub>Ga<sub>1-x</sub>N thin Films
- 2001Thermal Anneal Effects on Carbon-Hydrogen LVMs In AlGaN
- 2000Localized Vibrational Modes of Carbon-Hydrogen Complexes in MOCVD Grown GaN and AlGaN thin films
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article
Structural disorder in ion-implanted AlxGa1-xN
Abstract
The accumulation of structural damage in AlxGa1-xN films (with x=0.05-0.60) under heavy-ion bombardment at room temperature is studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy (XTEM). Results show that an increase in Al concentration strongly enhances dynamic annealing processes in AlGaN and suppresses ion-beam-induced amorphization. All AlGaN wafers studied show damage saturation in the bulk for high ion doses. Interestingly, the disorder level in the saturation regime is essentially independent of Al content. In contrast to the case of GaN, no preferential surface disordering is observed in AlGaN during heavy-ion bombardment. XTEM reveals similar implantation-produced defect structures in both GaN and AlGaN. (C) 2002 American Institute of Physics.