| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kaiser, U.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2020Tailoring the Charge/Discharge Potentials and Electrochemical Performance of SnO₂ Lithium‐Ion Anodes by Transition Metal Co‐Doping
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materials
- 2017Formation of nickel clusters wrapped in carbon cages: towards new endohedral metallofullerene synthesiscitations
- 2015Single step tranformation of sulphur to Li₂S₂/Li₂S in Li-S batteries
- 2012Strain and defects in Si-doped (Al)GaN epitaxial layerscitations
- 2010Identification of magnetic properties of few nm sized FePt crystalline particles by characterizing the intrinsic atom order using aberration corrected S/TEMcitations
- 2010Origin of valence and core excitations in LiFePO4 and FePO4citations
- 2009Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An X-ray diffraction study ; Sauerstoff induzierte Verspannungshomogenisierung in AlN Nukleationsschichten und deren Einfluss auf MOVPE GaN Schichten auf Saphir: Eine Röntgendiffraktometrie-Studiecitations
- 2008Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facetscitations
- 2007Study of a novel ALD process for depositing MgF2 thin filmscitations
- 2002Transmission electron microscopy study of Ge implanted into SiCcitations
- 2002Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealingcitations
Places of action
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article
Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing
Abstract
<jats:p>Ge nanocrystals were produced in 4H–SiC by implantation of 250 keV Ge+ ions with a dose of 1×1016 cm−2 and subsequent rapid thermal annealing at 1400–1600 °C. Radiation damage and Ge distribution after implantation and annealing were analyzed by Rutherford backscattering spectrometry, cross-sectional transmission electron microscopy methods, and x-ray diffraction. After ion implantation a significant amount of Ge is incorporated into the SiC lattice and Ge nanocrystallites were not found. Thermal annealing leads to a local Ge redistribution and both Ge-rich and Ge nanocrystals are detected after annealing. The size of the nanocrystals varies between 2 and 10 nm.</jats:p>