• Heß, G.
• Wesch, W.
• Kräußlich, J.
• Kaiser, U.
• Hedler, A.
• Schubert, Ch.
• Glatzel, U.
• Gorelik, Tatiana
• Wunderlich, B.
• Goetz, K.

Abstract

<jats:p>Ge nanocrystals were produced in 4H–SiC by implantation of 250 keV Ge+ ions with a dose of 1×1016 cm−2 and subsequent rapid thermal annealing at 1400–1600 °C. Radiation damage and Ge distribution after implantation and annealing were analyzed by Rutherford backscattering spectrometry, cross-sectional transmission electron microscopy methods, and x-ray diffraction. After ion implantation a significant amount of Ge is incorporated into the SiC lattice and Ge nanocrystallites were not found. Thermal annealing leads to a local Ge redistribution and both Ge-rich and Ge nanocrystals are detected after annealing. The size of the nanocrystals varies between 2 and 10 nm.</jats:p>

Topics

• impedance spectroscopy
• x-ray diffraction
• transmission electron microscopy
• annealing
• spectrometry
• Rutherford backscattering spectrometry