| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Gorelik, Tatiana
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2020Orientational disorder of monomethyl-quinacridone investigated by Rietveld refinement, structure refinement to the pair distribution function and lattice-energy minimizationscitations
- 20193D Electron Diffraction: The Nanocrystallography Revolutioncitations
- 2019Towards quantitative treatment of electron pair distribution functioncitations
- 2015Structural insights into<i>M</i><sub>2</sub>O–Al<sub>2</sub>O<sub>3</sub>–WO<sub>3</sub>(<i>M</i>= Na, K) system by electron diffraction tomographycitations
- 2015Crystalline Non‐Equilibrium Phase of a Cobalt(II) Complex with Tridentate Ligandscitations
- 2009Electron diffraction, X-ray powder diffraction and pair-distribution-function analyses to determine the crystal structures of Pigment Yellow 213, C<sub>23</sub>H<sub>21</sub>N<sub>5</sub>O<sub>9</sub>citations
- 2002Transmission electron microscopy study of Ge implanted into SiCcitations
- 2002Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealingcitations
Places of action
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article
Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing
Abstract
<jats:p>Ge nanocrystals were produced in 4H–SiC by implantation of 250 keV Ge+ ions with a dose of 1×1016 cm−2 and subsequent rapid thermal annealing at 1400–1600 °C. Radiation damage and Ge distribution after implantation and annealing were analyzed by Rutherford backscattering spectrometry, cross-sectional transmission electron microscopy methods, and x-ray diffraction. After ion implantation a significant amount of Ge is incorporated into the SiC lattice and Ge nanocrystallites were not found. Thermal annealing leads to a local Ge redistribution and both Ge-rich and Ge nanocrystals are detected after annealing. The size of the nanocrystals varies between 2 and 10 nm.</jats:p>