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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Segawa, Y.
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Topics
Publications (5/5 displayed)
- 2004Epitaxial growth and physical properties of a room temperature ferromagnetic semiconductor: Anatase phase Ti1−xCoxO2citations
- 2003Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layercitations
- 2002Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layerscitations
- 2001Anatase TiO2 thin films grown on lattice-matched LaAlO3 substrate by laser molecular-beam epitaxycitations
- 2000In-plane anisotropic strain of ZnO closely packed microcrystallites grown on tilted (0001) sapphire
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article
Anatase TiO2 thin films grown on lattice-matched LaAlO3 substrate by laser molecular-beam epitaxy
Abstract
<jats:p>Epitaxial anatase thin films were fabricated on lattice-matched (−0.2%) LaAlO3 (001) substrates in the layer-by-layer fashion by laser molecular-beam epitaxy. X-ray diffraction and transmission electron microscope show the films to exhibit high crystallinity and atomically defined interfaces. By virtue of the adoption of LaAlO3 substrate, which is transparent to photoexcitation of TiO2, optical band gaps could be determined to be 3.3 eV at room temperature. A photoluminescence band due to recombination of self-trapped excitons was observed at 5 K to give the peak maximum at 2.2 eV. As a result of the high degree of orientation of the epitaxial films, anisotropic optical absorption was clearly observed.</jats:p>