| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zou, J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023A study on the effects of laser shock peening on the microstructure and substructure of Ti–6Al–4V manufactured by Selective Laser Meltingcitations
- 2016Pulsed Field Magnetization of Single-Grain Bulk YBCO Processed from Graded Precursor Powders
- 2016III-V compound semiconductor nanowires for optoelectronic device applicationscitations
- 2011III-V compound semiconductor nanowires for optoelectronic device applicationscitations
- 2009III-V compound semiconductor nanowirescitations
- 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
- 2004Dynamic annealing in III-nitrides under ion bombardmentcitations
- 2004Lattice damage produced in GaN by swift heavy ionscitations
- 2003Ion-beam-produced structural defects in ZnOcitations
- 2002Ion-beam-produced damage and its stability in AlN filmscitations
- 2001Effect of ion species on the accumulation of ion-beam damage in GaN
- 2001The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaNcitations
- 2001Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperaturescitations
- 2000Ion-beam-induced porosity of GaNcitations
- 2000Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardmentcitations
- 2000Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in siliconcitations
- 2000Damage buildup in GaN under ion bombardmentcitations
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article
Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures
Abstract
<p>Ion-produced lattice disorder - often an undesirable effect of ion implantation - can be reduced if implantation is canned out at an elevated temperature. We present here a study of the structural characteristics of wurtzite GaN bombarded with <sup>197</sup>Au<sup>+</sup> ions at 550 °C over a wide dose range. Results show that disorder buildup and amorphization are suppressed at elevated temperatures, as compared to implantation at room temperature and below. With increasing ion dose, the evolution of damage proceeds via the formation of point-defect complexes and some planar defects, which are parallel to the basal plane of the GaN film. However, high-dose ion bombardment of GaN at elevated temperatures is complicated by anomalous surface erosion. Such an erosion is attributed to a three-step process of (i) the accumulation of implantation disorder with increasing ion dose, (ii) thermally and ion-beam-induced decomposition of a heavily damaged near-surface layer, and (iii) ion-beam-stimulated erosion of such a highly N-deficient layer.</p>