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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Waag, Andreas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlNcitations
- 2021Point defect-induced UV-C absorption in aluminum nitride epitaxial layers grown on sapphire substrates by metal-organic chemical vapor deposition
- 2021Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chipscitations
- 2020Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structurescitations
- 2020Plasma profiling time-of-flight mass spectrometry for fast elemental analysis of semiconductor structures with depth resolution in the nanometer rangecitations
- 2019Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronicscitations
- 2018Defect generation by nitrogen during pulsed sputter deposition of GaNcitations
- 20183D GaN Fins as a Versatile Platform for a-Plane-Based Devices
- 2017Enhanced Photoelectrochemical Behavior of H-TiO2 Nanorods Hydrogenated by Controlled and Local Rapid Thermal Annealing.citations
- 2016The influence of MOVPE growth conditions on the shell of core-shell GaN microrod structurescitations
- 2010GaN and ZnO nanostructurescitations
- 2001BeCdSe as a ternary alloy for blue-green optoelectronic applicationscitations
- 2001Spin Manipulation Using Magnetic II–VI Semiconductorscitations
- 2000Semimagnetic Resonant Tunneling Diodes for Electron Spin Manipulation
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article
BeCdSe as a ternary alloy for blue-green optoelectronic applications
Abstract
Bulk BeCdSe layer lattice-matched to a GaAs substrate, as well as a BeCdSe/ZnSe quantum well (QW) structure have been grown using the submonolayer digital alloying mode of molecular beam epitaxy. The structures have demonstrated bright photoluminescence up to room temperature and good structural quality. Stimulated emission under optical pumping has been obtained for a 2 nm BeCdSe/ZnSe multiple QW structure at 80 K. The bowing parameter of the energy gap of this ternary alloy has been estimated as about 4.5 eV.