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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Munroe, P.
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Topics
Publications (11/11 displayed)
- 2016Chemical bonding states and solar selective characteristics of unbalanced magnetron sputtered TixM1−x−yNyfilmscitations
- 2015Mapping strain modulated electronic structure perturbations in mixed phase bismuth ferrite thin filmscitations
- 2014Phase transformation pathways in amorphous germanium under indentation pressurecitations
- 2011Chemistry of Ruddlesden-Popper planar faults at a ferroelectric-ferromagnet perovskite interfacecitations
- 2009Nanoindentation of ion-implanted crystalline germaniumcitations
- 2009Effect of microstructure upon elastic behaviour of human tooth enamelcitations
- 2008Thickness-dependent phase transformation in nanoindented germanium thin filmscitations
- 2006Phase transformations induced by spherical indentation in ion-implanted amorphous siliconcitations
- 2004Phase transformations induced in relaxed amorphous silicon by indentation at room temperaturecitations
- 2001Mechanical deformation in silicon by micro-indentationcitations
- 2000Transmission electron microscopy observation of deformation microstructure under spherical indentation in siliconcitations
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article
Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon
Abstract
<p>Spherical indentation of crystalline silicon has been studied using cross-sectional transmission electron microscopy (XTEM). Indentation loads were chosen below and above the yield point for silicon to investigate the modes of plastic deformation. Slip planes are visible in the XTEM micrographs in both indentation loads studied. A thin layer of polycrystalline material has been identified (indexed as Si-XII from diffraction patterns) on the low-load indentation. The higher-load indentation revealed a large region of amorphous silicon. The sequence of structural deformation by indentation in silicon has been observed with the initial deformation mechanism being slip until phase transformations can take place.</p>