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| Naji, M. |
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| Petrov, R. H. | Madrid |
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| Azevedo, Nuno Monteiro |
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Zou, Jin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2022TiB reinforced lattice structures produced by laser powder bed fusion with high elastic admissible straincitations
- 2022High strength and ductility of titanium matrix composites by nanoscale design in selective laser meltingcitations
- 2020Tib nanowhisker reinforced titanium matrix composite with improved hardness for biomedical applicationscitations
- 2018Continuous flow synthesis of phosphate binding h-BN@magnetite hybrid materialcitations
- 2015Pulsed Field Magnetization of Single-Grain Bulk YBCO Processed from Graded Precursor Powderscitations
- 2011Superstructure formation and variation in Ni-GDC cermet anodes in SOFCcitations
- 2011Direct evidence of dopant segregation in Gd-doped ceriacitations
- 2011The diffusions and associated interfacial layer formation between thin film electrolyte and cermet anode in IT-SOFCcitations
- 2011Diffusion and segregation along grain boundary at the electrolyte–anode interface in IT-SOFCcitations
- 2011Two types of diffusions at the cathode/electrolyte interface in IT-SOFCscitations
- 2011Compound semiconductor nanowires for optoelectronic device applications
- 2011Mutual diffusion occurring at the interface between La0.6Sr0.4Co0.8Fe0.2O3 cathode and Gd-doped ceria electrolyte during IT-SOFC cell preparationcitations
- 2011Mutual diffusion and microstructure evolution at the electrolyte−anode interface in intermediate temperature solid oxide fuel cellcitations
- 2011Growth and properties of III-V compound semiconductor heterostructure nanowirescitations
- 2011III-V semiconductor nanowires for optoelectronic device applicationscitations
- 2010Microstructural and chemical aspects of working-temperature aged Ca-doped CeO2citations
- 2009Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures
- 2009III-V compound semiconductor nanowires
- 2009Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructurescitations
- 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
- 2008High purity GaAs nanowires free of planar defectscitations
- 2003Multilayered carbon films for tribological applicationscitations
- 2002Structural disorder in ion-implanted AlxGa1-xNcitations
- 2001Effect of ion species on the accumulation of ion-beam damage in GaNcitations
- 2000Ion-beam-induced dissociation and bubble formation in GaNcitations
- 2000Surface disordering and nitrogen loss in GaN under ion bombardment
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article
Ion-beam-induced dissociation and bubble formation in GaN
Abstract
Structural studies reveal that heavy ion bombardment of GaN causes amorphization and anomalous swelling of the implanted region as a result of the formation of a porous structure. Results strongly suggest that such a porous structure consists of N2 gas bubbles embedded into a highly N-deficient amorphous GaN matrix. The evolution of the porous structure in amorphous GaN appears to be a result of stoichiometric imbalance where N- and Ga-rich regions are produced by ion bombardment. Prior to amorphization, ion bombardment does not produce a porous structure due to very efficient dynamic annealing processes in the crystalline phase.