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Dong, J. W.
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article
Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers
Abstract
<p>Heusler alloy Ni<sub>2</sub>MnGa thin films have been grown pseudomorphically on a relaxed NiGa interlayer on GaAs(001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction patterns, ex situ x-ray diffraction, and cross-sectional view transmission electron microscopy electron diffraction patterns confirm the single-crystal growth of Ni<sub>2</sub>MnGa. The films grow pseudomorphically on the relaxed NiGa interlayer with a tetragonal structure (a=b=5.79 Å and c=6.07 Å). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers reveal Ni<sub>2</sub>MnGa to have an in-plane easy axis and a Curie temperature ∼350 K.</p>