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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Azevedo, Nuno Monteiro |
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Pearton, S. J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2023Tuning electrical properties in Ga2O3 polymorphs induced with ion beams ; ENEngelskEnglishTuning electrical properties in Ga2O3 polymorphs induced with ion beamscitations
- 2000Gd2O3/GaN metal-oxide-semiconductor field-effect transistorcitations
- 2000Surface disordering and nitrogen loss in GaN under ion bombardment
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article
Gd2O3/GaN metal-oxide-semiconductor field-effect transistor
Abstract
<p>Gd<sub>2</sub>O<sub>3</sub> has been deposited epitaxially on GaN using elemental Gd and an electron cyclotron resonance oxygen plasma in a gas-source molecular beam epitaxy system. Cross-sectional transmission electron microscopy shows a high concentration of dislocations which arise from the large lattice mismatch between the two materials. GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated using a dielectric stack of single crystal Gd<sub>2</sub>O<sub>3</sub> and amorphous SiO<sub>2</sub> show modulation at gate voltages up to 7 V and are operational at source drain voltages up to 80 V. This work represents demonstrations of single crystal growth of Gd<sub>2</sub>O<sub>3</sub> on GaN and of a GaN MOSFET using Gd<sub>2</sub>O<sub>3</sub> in the gate dielectric.</p>