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Gila, B. P.
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article
Gd2O3/GaN metal-oxide-semiconductor field-effect transistor
Abstract
<p>Gd<sub>2</sub>O<sub>3</sub> has been deposited epitaxially on GaN using elemental Gd and an electron cyclotron resonance oxygen plasma in a gas-source molecular beam epitaxy system. Cross-sectional transmission electron microscopy shows a high concentration of dislocations which arise from the large lattice mismatch between the two materials. GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated using a dielectric stack of single crystal Gd<sub>2</sub>O<sub>3</sub> and amorphous SiO<sub>2</sub> show modulation at gate voltages up to 7 V and are operational at source drain voltages up to 80 V. This work represents demonstrations of single crystal growth of Gd<sub>2</sub>O<sub>3</sub> on GaN and of a GaN MOSFET using Gd<sub>2</sub>O<sub>3</sub> in the gate dielectric.</p>