693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hertwig, Andreas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2024A multi-method study of femtosecond laser modification and ablation of amorphous hydrogenated carbon coatings
- 2024A multi-method study of femtosecond laser modification and ablation of amorphous hydrogenated carbon coatings
- 2024Picosecond laser processing of hierarchical micro–nanostructures on titanium alloy upon pre- and postanodization: morphological, structural, and chemical effects
- 2024Investigations of the adsorbed layer of polysulfone: Influence of the thickness of the adsorbed layer on the glass transition of thin filmscitations
- 2024Optical and tactile measurements on SiC sample defects
- 2024Optical and tactile measurements on SiC sample defects
- 2023Chemical and topographical changes upon sub-100-nm laser-induced periodic surface structure formation on titanium alloy: the influence of laser pulse repetition rate and number of over-scanscitations
- 2023Formation of laser-induced periodic surface structures on Zr-based bulk metallic glasses with different chemical compositioncitations
- 2023Influence of nanoparticle encapsulation and encoding on the surface chemistry of polymer carrier beadscitations
- 2023Influence of nanoparticle encapsulation and encoding on the surface chemistry of polymer carrier beadscitations
- 2023Growth kinetics of the adsorbed layer of poly(bisphenol A carbonate) and its effect on the glass transition behavior in thin filmscitations
- 2023Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layerscitations
- 2022Multilevel effective material approximation for modeling ellipsometric measurements on complex porous thin filmscitations
- 2021Do Interfacial Layers in Thin Films Act as an Independent Layer Within Thin Films?citations
- 2021Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Siliconcitations
- 2020Development of layer‐by‐layer assembled thin coatings on aluminium alloy AA2024‐T3 for high resolution studies of local corrosion processes
- 2020Development of layer-by-layer assembled thin coatings on aluminium alloy AA2024-T3 for high resolution studies of local corrosion processescitations
- 2020Colloidal bimetallic platinum–ruthenium nanoparticles in ordered mesoporous carbon films as highly active electrocatalysts for the hydrogen evolution reaction
- 2017Ellipsometric porosimetry on pore-controlled TiO2 layerscitations
- 2017Decoupling of dynamic and thermal glass transition in thin films of a PVME/PS blendcitations
- 2016New approach on quantification of porosity of thin films via electron-excited X‑ray spectracitations
- 2016Preparation of pulsed DC magnetron deposited Fe-doped SnO2 coatingscitations
- 2010Imaging the microstructure of duplex stainless steel samples with TOF-SIMScitations
- 2007Hydrogen-Containing Amorphous Carbon Layers as Optical Materials in the Near-IR Spectral Rangecitations
- 2004Surface damage and color centers generated by femtosecond pulses in borosilicate glass and silicacitations
Places of action
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article
Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layers
Abstract
<jats:p>Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructive detection, classification, and characterisation of defects in 4H–SiC homoepitaxial layers on 4H–SiC substrates. Ellipsometry measurement results are confirmed by WLIM. They can be successfully applied for wafer characterisation already during production of SiC epilayers and for subsequent industrial quality control.</jats:p>