| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cardoso, S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2022Labeling on a Chip of Cellular Fibronectin and Matrix Metallopeptidase-9 in Human Serumcitations
- 2022Seebeck effect and Joule heating in CoFeB/MgO/CoFeB-based perpendicular magnetic tunnel junctions with low resistance area productcitations
- 2020Orthorhombic GdMnO<sub>3</sub> Epitaxial Thin Film Grown onto SrTiO<sub>3</sub> (110)
- 2018All-spinel oxide Josephson junctions for high-efficiency spin filtering.
- 2017Bipolar resistive switching in Si/Ag nanostructurescitations
- 2017Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputteringcitations
- 2015Characterization tests for insulation boards made from corn cob and natural glues
- 2013Coupling and induced depinning of magnetic domain walls in adjacent spin valve nanotrackscitations
- 2011Resonant Tunneling through Electronic Trapping States in Thin MgO Magnetic Junctionscitations
- 2004Peculiar magnetic and electrical properties near structural percolation in metal-insulator granular layerscitations
Places of action
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article
Orthorhombic GdMnO<sub>3</sub> Epitaxial Thin Film Grown onto SrTiO<sub>3</sub> (110)
Abstract
<jats:p>GdMnO3 epitaxial thin films were deposited onto (110)-oriented SrTiO3 substrates by RF magnetron sputtering. The structure, microstructure, dielectric and magnetic properties were investigated in detail. The XRD results revealed that the GdMnO3 thin films exhibit an epitaxial strained orthorhombic symmetry and grow preferably in off-plane (001) orientation, wherein the basal lattice parameters are strained by the substrate lattice. A dielectric relaxation process was ascertained, whose activation energy is sensitive to the magnetic phase transitions, occurring at 41 K and at 20 K, respectively. The canted nature of the low temperature magnetic phase is discussed.</jats:p>