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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hourahine, Benjamin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2020Luminescence behavior of semipolar (10-11) InGaN/GaN "bow-tie" structures on patterned Si substratescitations
- 2019Collapsed carbon nanotubes : from nano to mesoscale via density functional theory-based tight-binding objective molecular modelingcitations
- 2019Collapsed carbon nanotubescitations
- 2018Dislocation contrast in electron channelling contrast images as projections of strain-like componentscitations
- 2017Coherent control of plasmons in nanoparticles with nonlocal responsecitations
- 2016Reprint of
- 2016Electron channelling contrast imaging for III-nitride thin film structurescitations
- 2013Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscopecitations
- 2012Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscopecitations
- 2010Theoretical modelling of rare Earth dopants in GaNcitations
- 2009Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition rangecitations
- 2007Efficient tight-binding approach for the study of strongly correlated systemscitations
- 2006Rare earth doped III-nitrides for optoelectronicscitations
- 2006Hydrogen molecules and platelets in germaniumcitations
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article
Rare earth doped III-nitrides for optoelectronics
Abstract
<p>Rare-earth (RE) doped III-nitrides, prepared by in-situ doping during growth or by ion implantation and annealing, are promising materials for visible light emitting displays. In addition, they are plantation extremely challenging theoretically, on account of the complexity of the sharp inter-4f optical transitions, which are allowed only through the mixing by non-centrosymmetric crystal. elds of the inner-4f orbitals with higher-lying states of opposite parity. We review recent experimental and theoretical work on Er-, Eu- and Tm-doped III-nitride compounds and alloys which has been carried out with a view to establishing the lattice location of RE in these materials and the probable nanostructure of the centres which are responsible for their luminescence. The isolated site REIII is found to be both optically and electrically inactive, but in association with neighbouring intrinsic defects (most probably nitrogen vacancies) REIII can generate a small family of similar optically active sites. Such a family is held to be responsible for the site multiplicity that is a common feature of the spectroscopy of RE-doped III-nitrides.</p>