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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Nkhaili, Lahcen
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Publications (3/3 displayed)
- 2022Effect of annealing time on different properties of the next generation Cu<sub>2</sub>Ni<sub>0.50</sub>Co<sub>0.50</sub>SnS<sub>4</sub>Thin filmscitations
- 2021Effect of RF Sputtering Power and Deposition Time on Optical and Electrical Properties of Indium Tin Oxide Thin Filmcitations
- 2017FTIR and Raman study of rapid thermal annealing and oxidation effects on structural properties of silicon-rich Si x C 1-x thin films deposited by R.F co-sputteringcitations
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article
Effect of annealing time on different properties of the next generation Cu<sub>2</sub>Ni<sub>0.50</sub>Co<sub>0.50</sub>SnS<sub>4</sub>Thin films
Abstract
<jats:p>In this report, the Multifunctional Quinary Cu<jats:sub>2</jats:sub>Ni<jats:sub>0.50</jats:sub>Co<jats:sub>0.50</jats:sub>SnS<jats:sub>4</jats:sub> synthesized by a cheap and easy-to-use technique using spin-coating on glass substrates. XRD spectra of Cu<jats:sub>2</jats:sub>Ni<jats:sub>0.50</jats:sub>Co<jats:sub>0.50</jats:sub>SnS<jats:sub>4</jats:sub> annealing at 300 °C demonstrated the structure similar to that of Cu<jats:sub>2</jats:sub>NiSnS<jats:sub>4</jats:sub> and Cu<jats:sub>2</jats:sub>CoSnS<jats:sub>4</jats:sub> for 60 min and 90 min. The Raman scattering demonstrated the existence of Raman Cu<jats:sub>2</jats:sub>Ni<jats:sub>0.50</jats:sub>Co<jats:sub>0.50</jats:sub>SnS<jats:sub>4</jats:sub> peaks positioned at 286 and 331 cm<jats:sup>−1</jats:sup> which allows us to tell the structure of Cu<jats:sub>2</jats:sub>Ni<jats:sub>0.50</jats:sub>Co<jats:sub>0.50</jats:sub>SnS<jats:sub>4</jats:sub> similar only to Cu<jats:sub>2</jats:sub>NiSnS<jats:sub>4</jats:sub>. The EDS studies demonstrated a quasi-stoichiometry of the Cu<jats:sub>2</jats:sub>Ni<jats:sub>0.50</jats:sub>Co<jats:sub>0.50</jats:sub>SnS<jats:sub>4</jats:sub> annealed sample with a low effect of annealing time on stoichiometry. The scanning electron microscope showed nearly uniform, dense and rough surface morphology with some voids. UV-visible-NIR spectroscopy revealed the gap energy of Cu<jats:sub>2</jats:sub>Ni<jats:sub>0.50</jats:sub>Co<jats:sub>0.50</jats:sub>SnS<jats:sub>4</jats:sub> absorbent layers annealed at 300 °C for 60 min is 1.38 eV, which is very close to the optimal value of the solar spectrum signed by Shockley-Queisser. These results are ideally suited for low-cost, soil-abundant and non-toxic materials for photovoltaic applications.</jats:p>